http://www.cnr.it/ontology/cnr/individuo/prodotto/ID36712

First and second-order Raman scattering in Si nanostructures within silicon nitride (Articolo in rivista)

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First and second-order Raman scattering in Si nanostructures within silicon nitride (Articolo in rivista) (literal)

Anno

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Alternative label

Mercaldo LV, Esposito EM, Veneri PD, Fameli G, Mirabella S, Nicotra G (2010)
First and second-order Raman scattering in Si nanostructures within silicon nitride
in Applied physics letters; American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
(literal)

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1. ENEA Portici Res Ctr, I-80055 Naples, Italy 2. CNR IMM MATIS, I-95123 Catania, Italy 3. CNR IMM, I-95121 Catania, Italy (literal)

Titolo

First and second-order Raman scattering in Si nanostructures within silicon nitride (literal)

Abstract

First and second-order Raman analysis on annealed silicon nitride films is reported. Possible formation of amorphous Si nanoparticles after an intermediate treatment is deduced from the occurrence of a resonant spectrum. After nucleation of Si nanocrystals, with a model description of the first-order spectra it is possible to access information regarding mean radius, size dispersion, and crystalline phase fraction consistent with the fundamental data derived from microscopy. Substantial increase in second to first order intensity ratio is also observed: Enhanced electron-phonon coupling in both amorphous and crystalline Si nanoparticles is suggested. (literal)

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