Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si (Articolo in rivista)

Type
Label
  • Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.82.155323 (literal)
Alternative label
  • Mastromatteo M, De Salvador D, Napolitani E, Panciera F, Bisognin G, Carnera A, Impellizzeri G, Mirabella S, Priolo F (2010)
    Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si
    in Physical review. B, Condensed matter and materials physics (Online); American Physical Society (APS), College Pk (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Mastromatteo M, De Salvador D, Napolitani E, Panciera F, Bisognin G, Carnera A, Impellizzeri G, Mirabella S, Priolo F (literal)
Pagina inizio
  • 155323 (literal)
Pagina fine
  • 155323 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 82 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Univ Padua, MATIS IMM CNR, I-35131 Padua, Italy 2. Univ Padua, Dipartimento Fis, I-35131 Padua, Italy 3. Univ Catania, MATIS IMM CNR, I-95123 Catania, Italy 4. Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy (literal)
Titolo
  • Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si (literal)
Abstract
  • The redistribution of fluorine during solid phase epitaxial regrowth (SPER) of preamorphized Si has been experimentally investigated, explained, and simulated, for different F concentrations and temperatures. We demonstrate, by a detailed analysis and modeling of F secondary ion mass spectrometry chemical-concentration profiles, that F segregates in amorphous Si during SPER by splitting in three possible states: (i) a diffusive one that migrates in amorphous Si; (ii) an interface segregated state evidenced by the presence of a F accumulation peak at the amorphous-crystal interface; (iii) a clustered F state. The interplay among these states and their roles in the F incorporation into crystalline Si are fully described. It is shown that diffusive F migrates by a trap limited diffusion mechanism and also interacts with the advancing interface by a sticking-release dynamics that regulates the amount of F segregated at the interface. We demonstrate that this last quantity determines the regrowth rate through an exponential law. On the other hand we show that neither the diffusive F nor the one segregated at the interface can directly incorporate into the crystal but F has to cluster in the amorphous phase before being incorporated in the crystal, in agreement with recent experimental observations. The trends of the model parameters as a function of the temperature are shown and discussed obtaining a clear energetic scheme of the F redistribution and incorporation in preamorphized Si. The above physical understanding and the model could have a strong impact on the use of F as a tool for optimizing the doping profiles in the fabrication of ultrashallow junctions. (literal)
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