Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.3390/s101210571 (literal)

Alternative label

• Casalino M, Coppola G, Iodice M, Rendina I, Sirleto L (2010)
  Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives
  in Sensors (Basel)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Casalino M, Coppola G, Iodice M, Rendina I, Sirleto L (literal)

Pagina inizio

• 10571 (literal)

Pagina fine

• 10600 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.mdpi.com/1424-8220/10/12/10571 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 10 (literal)

Rivista

• Sensors (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 30 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• IMM-CNR (literal)

Titolo

• Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives (literal)

Abstract

• Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Microsistemi optoelettronici in silicio e tecnologie compatibili (MD.P05.014.001) (Modulo)

Autore CNR

• MARIO IODICE (Unità di personale interno)
• LUIGI SIRLETO (Persona)
• GIUSEPPE COPPOLA (Persona)
• IVO RENDINA (Unità di personale interno)
• MAURIZIO CASALINO (Persona)

Insieme di parole chiave

• Parole chiave di "Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Microsistemi optoelettronici in silicio e tecnologie compatibili (MD.P05.014.001) (Modulo)

Autore CNR di

• MARIO IODICE (Unità di personale interno)
• MAURIZIO CASALINO (Persona)
• LUIGI SIRLETO (Persona)
• IVO RENDINA (Unità di personale interno)
• GIUSEPPE COPPOLA (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Sensors (Rivista)

Insieme di parole chiave di

• Parole chiave di "Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives" (Insieme di parole chiave)