http://www.cnr.it/ontology/cnr/individuo/prodotto/ID36676
Single AlxGa1-xAs nanowires probed by Raman spectroscopy (Articolo in rivista)
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- Single AlxGa1-xAs nanowires probed by Raman spectroscopy (Articolo in rivista) (literal)
- Anno
- 2010-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1002/pssb.200983948 (literal)
- Alternative label
Buick B, Speiser E, Prete P, Paiano P, Lovergine N, Richter W (2010)
Single AlxGa1-xAs nanowires probed by Raman spectroscopy
in Physica status solidi. B, Basic research; WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim (Germania)
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- Buick B, Speiser E, Prete P, Paiano P, Lovergine N, Richter W (literal)
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- 1. Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy
2. Inst Analyt Sci Dept Berlin, ISAS, D-12489 Berlin, Germany
3. IMM CNR, Lecce Res Unit, I-73100 Lecce, Italy
4. Univ Salento, CNISM, Unita Ric Lecce, I-73100 Lecce, Italy
5. Univ Salento, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy (literal)
- Titolo
- Single AlxGa1-xAs nanowires probed by Raman spectroscopy (literal)
- Abstract
- The stoichiometry of single ternary III-V semiconductor nanowires was analyzed by Raman spectroscopy. Free-standing AlxGa1-xAs nanowires were obtained through metal organic vapor phase epitaxy (MOVPE) by the vapor liquid solid (VLS) mechanism on GaAs substrates. The as-grown nanowires were studied with a scanning confocal Raman spectrometer (spatial resolution approximate to 300 nm). They were located by Rayleigh imaging and individual nanowires selected for Raman spectroscopy. The acquired spectra exhibit 2-mode behavior. The stoichiometry of single nanowires was determined based on the frequencies of the GaAs- and AlAs-like transversal optical (TO) and longitudinal optical (LO) peaks with an accuracy of below 10%. Measurements at different positions along the axis revealed variations of the composition within single nanowires. This non-uniformity evidences that the nanowires possess an internal structure. (literal)
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