Investigation of graphene-SiC interface by nanoscale electrical characterization (Articolo in rivista)

Type
Label
  • Investigation of graphene-SiC interface by nanoscale electrical characterization (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • Sonde S, Giannazzo F, Raineri V, Rimini E (2010)
    Investigation of graphene-SiC interface by nanoscale electrical characterization
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Sonde S, Giannazzo F, Raineri V, Rimini E (literal)
Pagina inizio
  • 912 (literal)
Pagina fine
  • 915 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 247 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Scuola Superiore Catania, I-95123 Catania, Italy 2. IMM, CNR, I-95121 Catania, Italy 3. Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy (literal)
Titolo
  • Investigation of graphene-SiC interface by nanoscale electrical characterization (literal)
Abstract
  • We have carried out an investigation of graphene/4H-SiC (0001) interface by nanoscale current transport measurements. Graphene was deposited by mechanical exfoliation of HOPG. Novel Scanning Probe Current Mapping and Scanning Probe Current Spectroscopy are found to be useful for non-destructive characterization of graphene. Presence of graphene lowers Schottky barrier height on 4H-SiC (0001). Observed barrier heights (0.8 +/- 0.1 eV) are comparable but higher than reported in literature for 6H-SiC (0001). (literal)
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