Nanoscale capacitive behaviour of ion irradiated graphene on silicon oxide substrate (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Nanoscale capacitive behaviour of ion irradiated graphene on silicon oxide substrate (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1002/pssb.200982968 (literal)

Alternative label

• Sonde S, Giannazzo F, Raineri V, Rimini E (2010)
  Nanoscale capacitive behaviour of ion irradiated graphene on silicon oxide substrate
  in Physica status solidi. B, Basic research
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Sonde S, Giannazzo F, Raineri V, Rimini E (literal)

Pagina inizio

• 907 (literal)

Pagina fine

• 911 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 247 (literal)

Rivista

• Physica status solidi. B, Basic research (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. Scuola Superiore Catania, I-95123 Catania, Italy 2. IMM, CNR, I-95121 Catania, Italy 3. Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy (literal)

Titolo

• Nanoscale capacitive behaviour of ion irradiated graphene on silicon oxide substrate (literal)

Abstract

• Single layers of graphene obtained by mechanicla exfoliation of highly oriented pyrolytic graphite and deposited on a SiO2/n Si substrate were irradiated with high energy (500 keV) C ions Controlled amounts of defects were introduced in graphene by a precise control of the ion fluence ranging grom 1 x 10(13) to 1 x 10(14) cm(-2). Scanning capacitance spectroscopy (SCS) was used as non-destructive characterization technique to probe the effect of irradiation defects on the electrical properties of graphene. A wider variation between the capacitance curves measured at different positions on irradiated graphene is found in comparison with the pristine graphene. The quantum capacitance per unit area C-q' was extracted from raw data. In particular an increase of C-q' is associated to the damaged regions. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Autore CNR

• SUSHANT SUDAM SONDE (Unità di personale esterno)
• FILIPPO GIANNAZZO (Persona)
• VITO RAINERI (Persona)

Incoming links:

Autore CNR di

• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)
• SUSHANT SUDAM SONDE (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physica status solidi. B, Basic research (Rivista)