Formation and evolution of small B clusters in Si: Ion channeling study (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Formation and evolution of small B clusters in Si: Ion channeling study (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.81.075210 (literal)

Alternative label

• Romano L, Piro AM, Mirabella S, Grimaldi MG (2010)
  Formation and evolution of small B clusters in Si: Ion channeling study
  in Physical review. B, Condensed matter and materials physics; The American Physical Society, College Park, MD 20740-3844 (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Romano L, Piro AM, Mirabella S, Grimaldi MG (literal)

Pagina inizio

• 075210 (literal)

Pagina fine

• 075210 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 81 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. INFM, CNR, MATIS, I-95123 Catania, Italy 2. Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy (literal)

Titolo

• Formation and evolution of small B clusters in Si: Ion channeling study (literal)

Abstract

• B off-lattice displacement in B-doped Si was observed under Si self-interstitials (Is) supersaturation induced by ion irradiation at room temperature. B lattice location has a characteristic channeling mark and was studied by nuclear reaction analyses and ion channeling technique, through the comparison of the performed angular scans along the < 100 > and < 110 > crystal axes and the simulated scans by FLUX code. Solid and liquid-phase epitaxies and molecular beam epitaxy were used to prepare B-doped Si samples in order to investigate samples with B concentration in the range between 10(19) and 10(21) at/cm(3). B off-lattice displacement is limited by the fluence of excess Is per B atom. Small B-Is clusters (BICs) were formed as consequence of the interaction with Is produced during the ion irradiation. Clusters structures were investigated by simulating the channeling angular scans of cluster configurations predicted by theoretical calculations. In the early stage of Is injection, experimental observations are consistent with the presence of the predicted B2I clusters. These small BICs evolved into different structures under further ion irradiation. (literal)

Editore

• The American Physical Society (Editore)

Prodotto di

• MD.P05.006.001 Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.002) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• SALVATORE MIRABELLA (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• MD.P05.006.001 Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.002) (Modulo)

Autore CNR di

• SALVATORE MIRABELLA (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)

Editore di

• The American Physical Society (Editore)