Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Alternative label

• Napolitani E, Bisognin G, Bruno E, Mastromatteo M, Scapellato GG, Boninelli S, De Salvador D, Mirabella S, Spinella C, Carnera A, Priolo F (2010)
  Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Napolitani E, Bisognin G, Bruno E, Mastromatteo M, Scapellato GG, Boninelli S, De Salvador D, Mirabella S, Spinella C, Carnera A, Priolo F (literal)

Pagina inizio

• 201906 (literal)

Pagina fine

• 201906 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 96 (literal)

Rivista

• Applied physics letters (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. Univ Padua, CNR, MATIS IMM, I-35131 Padua, Italy 2. Univ Padua, Dipartimento Fis, I-35131 Padua, Italy 3. CNR, IMM, I-95121 Catania, Italy 4. Univ Catania, MATIS IMM, CNR, I-95123 Catania, Italy 5. Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy (literal)

Titolo

• Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge (literal)

Abstract

• The dissolution of interstitial-type end-of-range (EOR) damage in preamorphized Ge is shown to induce a transient enhanced diffusion of an epitaxially grown boron delta at temperatures above 350 degrees C that saturates above 420 degrees C. The B diffusion events are quantitatively correlated with the measured positive strain associated with the EOR damage as a function of the annealing temperature with an energy barrier for the EOR damage dissolution of 2.1 +/- 0.3 eV. These results unambiguously demonstrate that B diffuses in Ge through a mechanism assisted by self-interstitials, and impose considering the interstitial implantation damage for the modeling of impurity diffusion in Ge. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• MD.P05.006.001 Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.002) (Modulo)

Autore CNR

• SALVATORE MIRABELLA (Unità di personale interno)
• ROSARIO CORRADO SPINELLA (Persona)
• SIMONA MARIA CRISTINA BONINELLI (Persona)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• MD.P05.006.001 Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.002) (Modulo)

Autore CNR di

• SALVATORE MIRABELLA (Unità di personale interno)
• ROSARIO CORRADO SPINELLA (Persona)
• SIMONA MARIA CRISTINA BONINELLI (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)