Reliability of RF MEMS switches due to charging effects and their circuital modelling (Articolo in rivista)

Type
Label
  • Reliability of RF MEMS switches due to charging effects and their circuital modelling (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1007/s00542-009-1006-z (literal)
Alternative label
  • Marcelli R, Bartolucci G, Papaioannu G, De Angelis G, Lucibello A, Proietti E, Margesin B, Giacomozzi F, Deborgies F (2010)
    Reliability of RF MEMS switches due to charging effects and their circuital modelling
    in Microsystem technologies; SPRINGER-VERLAG, WIEN (Austria)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Marcelli R, Bartolucci G, Papaioannu G, De Angelis G, Lucibello A, Proietti E, Margesin B, Giacomozzi F, Deborgies F (literal)
Pagina inizio
  • 1111 (literal)
Pagina fine
  • 1118 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 16 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 8 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 7 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. CNR IMM Roma, I-00133 Rome, Italy 2. Univ Roma Tor Vergata, Dept Elect Engn, I-00133 Rome, Italy 3. Univ Athens, Solid State Phys Sect, Athens 15784, Greece 4. FBK Irst, I-38050 Povo, TN Italy 5. ESA ESTEC, Noordwijk, Netherlands (literal)
Titolo
  • Reliability of RF MEMS switches due to charging effects and their circuital modelling (literal)
Abstract
  • The reliability of RF MEMS switches is typically reduced by charging effects occurring in the dielectrics. The aim of this paper is to discuss these effects, and to propose analytical and equivalent circuit models which account for most of the physical contributions present in the structure. (literal)
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