On direct-writing methods for electrically contacting GaAs and Ge nanowire devices (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• On direct-writing methods for electrically contacting GaAs and Ge nanowire devices (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.3441404 (literal)

Alternative label

• Chen GN, Gallo EM, Burger J, Nabet B, Cola A, Prete P, Lovergine N, Spanier JE (2010)
  On direct-writing methods for electrically contacting GaAs and Ge nanowire devices
  in Applied physics letters; AIP, American institute of physics, Melville, NY (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Chen GN, Gallo EM, Burger J, Nabet B, Cola A, Prete P, Lovergine N, Spanier JE (literal)

Pagina inizio

• 223107-1 (literal)

Pagina fine

• 223107-3 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://apps.webofknowledge.com (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 96 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 3 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 22 (literal)

Note

• Google Scholar (literal)
• Scopu (literal)
• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA 2. Drexel Univ, Dept Elect & Comp Engn, Philadelphia, PA 19104 USA 3. CNR, IMM, I-73100 Lecce, Italy 4. Univ Salento, Dept Innovat Engn, I-73100 Lecce, Italy (literal)

Titolo

• On direct-writing methods for electrically contacting GaAs and Ge nanowire devices (literal)

Abstract

• The electronic transport and gating characteristics in GaAs and Ge nanowires (NWs) are altered significantly following either indirect or direct exposure to a focused Ga+ ion beam (FIB), such as that used to produce Pt electrical contacts to NWs. While these results challenge the assumptions made in some previously reported work relating to the electronic properties of semiconductor NWs using FIB-assisted production of contacts and/or their leads, local electron beam induced deposition is shown to be a reliable and facile route for producing robust electrical contacts to individual vapor phase-grown NWs in a manner that enables study of their actual carrier transport properties. (literal)

Editore

• AIP, American institute of physics (Editore)

Prodotto di

• materiali e processi per la realizzazione di dispositivi per la conversione di energia (MD.P05.019.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• PAOLA PRETE (Persona)
• ADRIANO COLA (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• materiali e processi per la realizzazione di dispositivi per la conversione di energia (MD.P05.019.001) (Modulo)

Autore CNR di

• ADRIANO COLA (Unità di personale interno)
• PAOLA PRETE (Persona)

Editore di

• AIP, American institute of physics (Editore)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)