Fabrication and Characterization of a Back-Illuminated Resonant Cavity Enhanced Silicon Photo-Detector Working at 1.55 mu m (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Fabrication and Characterization of a Back-Illuminated Resonant Cavity Enhanced Silicon Photo-Detector Working at 1.55 mu m (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Alternative label

• Casalino M, Sirleto L, Moretti L, Gioffre M, Coppola G, Iodice M, Rendina I (2010)
  Fabrication and Characterization of a Back-Illuminated Resonant Cavity Enhanced Silicon Photo-Detector Working at 1.55 mu m
  in Fiber and integrated optics (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Casalino M, Sirleto L, Moretti L, Gioffre M, Coppola G, Iodice M, Rendina I (literal)

Pagina inizio

• 85 (literal)

Pagina fine

• 95 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 29 (literal)

Rivista

• Fiber and integrated optics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, Sez Napoli, IMM, I-00185 Rome, Italy (literal)

Titolo

• Fabrication and Characterization of a Back-Illuminated Resonant Cavity Enhanced Silicon Photo-Detector Working at 1.55 mu m (literal)

Abstract

• In this article, the realization and characterization of a new kind of resonant cavity enhanced photo-detector, fully compatible with silicon microelectronic technologies and working at 1.55 mu m, are reported. The detector is a resonant cavity enhanced structure incorporating a Schottky diode, and its working principle is based on the internal photo-emission effect. A comparison between a Schottky diode (Al/Si or Cu/Si) and the Schottky diode fed on a high-reflectivity Bragg mirror is carried out. Considering Al as Schottky metal, no difference in responsivity is obtained; considering Cu as Schottky metal, a three-fold responsivity improvement is experimentally demonstrated. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Microsistemi optoelettronici in silicio e tecnologie compatibili (MD.P05.014.001) (Modulo)

Autore CNR

• MAURIZIO CASALINO (Unità di personale esterno)
• IVO RENDINA (Unità di personale interno)
• LUIGI SIRLETO (Persona)
• MARIANO ANTONIO GIOFFRE' (Unità di personale interno)
• MARIO IODICE (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Microsistemi optoelettronici in silicio e tecnologie compatibili (MD.P05.014.001) (Modulo)

Autore CNR di

• MARIO IODICE (Unità di personale interno)
• MAURIZIO CASALINO (Unità di personale esterno)
• MARIANO ANTONIO GIOFFRE' (Unità di personale interno)
• LUIGI SIRLETO (Persona)
• IVO RENDINA (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Fiber and integrated optics (Rivista)