Substitutional and clustered B in ion implanted Ge: Strain determination (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Substitutional and clustered B in ion implanted Ge: Strain determination (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Alternative label

• Bisognin G, Vangelista S, Berti M, Impellizzeri G, Grimaldi MG (2010)
  Substitutional and clustered B in ion implanted Ge: Strain determination
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Bisognin G, Vangelista S, Berti M, Impellizzeri G, Grimaldi MG (literal)

Pagina inizio

• 103512 (literal)

Pagina fine

• 103512 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 107 (literal)

Rivista

• Journal of applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. Univ Padua, CNR, IMM MATIS, I-35131 Padua, Italy 2. Univ Padua, Dipartimento Fis, I-35131 Padua, Italy 3. Univ Catania, CNR, IMM MATIS, I-95123 Catania, Italy 4. Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy (literal)

Titolo

• Substitutional and clustered B in ion implanted Ge: Strain determination (literal)

Abstract

• The lattice strain induced both by substitutional and clustered B in B-implanted Ge samples has been investigated by means of high resolution x-ray diffraction (HRXRD). The main results can be summarized as follows: while substitutional (i.e., electrically active) B exhibits a negative strain, clustered (i.e., electrically inactive) B reverses the lattice strain from negative to positive values, the latter being much higher with respect to those found for clustered B in Si. In particular, the lattice volume modification for each B atom (Delta V) induced by substitutional (Delta V-Sub) and clustered (Delta V-Cl) B is V-Sub=-12.4 angstrom(3) and V-Cl=+14.8 angstrom(3), respectively. These unexpected results demonstrate the ability of HRXRD to quantitatively detect the amount of electrically inactive (and active) B. (literal)

Prodotto di

• MD.P05.006.001 Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.002) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• GIULIANA IMPELLIZZERI (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• MD.P05.006.001 Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.002) (Modulo)

Autore CNR di

• GIULIANA IMPELLIZZERI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)