Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Alternative label

• Berbezier I, Ayoub JP, Ronda A, Oehme M, Lyutovich K, Kasper E, Di Marino M, Bisognin G, Napolitani E, Berti M (2010)
  Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Berbezier I, Ayoub JP, Ronda A, Oehme M, Lyutovich K, Kasper E, Di Marino M, Bisognin G, Napolitani E, Berti M (literal)

Pagina inizio

• 034309 (literal)

Pagina fine

• 034309 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 107 (literal)

Rivista

• Journal of applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. CNRS, F-13397 Marseille 20, France 2. Inst Halbleitertech, D-70569 Stuttgart, Germany 3. Univ Padua, Dipartimento Fis, I-35131 Padua, Italy 4. Univ Padua, MATIS CNR INFM, I-35131 Padua, Italy (literal)

Titolo

• Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping (literal)

Abstract

• We implement a low temperature (LT) growth technique for achieving abrupt n-type doping profiles in order to match the vertical scaling of modulation doped field effect transistor fully depleted structures. We use strain engineering of Ge rich Si1-xGex layers at LTs to suppress dopant segregation and to fully incorporate antimony in ultrathin Si1-xGex layers. We show that, only in the LT terrace-mediated kinetically limited regime, segregation is controlled by strain. At higher temperatures, in the step-edge mediated kinetically limited regime, segregation becomes independent of strain and at even higher temperatures, segregation follows the classical equilibrium behaviour mainly controlled by reduction of surface energy and not by strain. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• MD.P05.006.001 Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.002) (Modulo)

Autore CNR

• ENRICO NAPOLITANI (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• MD.P05.006.001 Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.002) (Modulo)

Autore CNR di

• ENRICO NAPOLITANI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)