Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO2 interface (Articolo in rivista)

Type
Label
  • Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO2 interface (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3446839 (literal)
Alternative label
  • Baldovino S, Molle A, Fanciulli M (2010)
    Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO2 interface
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Baldovino S, Molle A, Fanciulli M (literal)
Pagina inizio
  • 222110 (literal)
Pagina fine
  • 222110 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 96 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy 2. CNR IMM Lab MDM, I-20041 Agrate Brianza, MB Italy (literal)
Titolo
  • Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO2 interface (literal)
Abstract
  • The nature of the defects present at various Ge/GeO2 interfaces has been investigated by means of electrically detected magnetic resonance (EDMR) spectroscopy. GeO2 thin films were grown by atomic oxygen, ozone, and molecular oxygen exposure. The defect microstructure is sensitive to the oxidizing species, i.e., to the oxidation mechanism. Different EDMR spectra are correlated with the specific electrical response of the corresponding Ge/GeO2 metal-oxide-semiconductor structures. (C) 2010 American Institute of Physics. (literal)
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