Quantum-confined Stark effect in Ge/SiGe quantum wells: A tight-binding description (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Quantum-confined Stark effect in Ge/SiGe quantum wells: A tight-binding description (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.77.165315 (literal)

Alternative label

• Virgilio, M; Grosso, G (2008)
  Quantum-confined Stark effect in Ge/SiGe quantum wells: A tight-binding description
  in Physical review. B, Condensed matter and materials physics; AIP, American institute of physics, Melville, NY (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Virgilio, M; Grosso, G (literal)

Pagina inizio

• 165315 (literal)

Pagina fine

• 165321 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://link.aps.org/doi/10.1103/PhysRevB.77.165315 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 77 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 7 (literal)

Note

• ISI Web of Science (WOS) (literal)
• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• \"[Virgilio, Michele] Univ Pisa, NEST INFM, I-56127 Pisa, Italy; Univ Pisa, Dipartimento Fis E Fermi, I-56127 Pisa, Italy (literal)

Titolo

• Quantum-confined Stark effect in Ge/SiGe quantum wells: A tight-binding description (literal)

Abstract

• \"We present a tight-binding study of the strong quantum confined Stark effect (QCSE) involving direct transitions in Ge/SiGe quantum wells. Our aim is to provide a theoretical and numerical description of the experimental results by Kuo [Nature 437, 1334 (2005)] by means of a tight-binding model. In the presence and in the absence of external electric fields, we are able to assign of the states involved in the observed transitions. Oscillator strengths for normal and parallel incident radiation are evaluated. In particular, the genuine direct transitions in the Ge region, at the Gamma point, and the direct transitions coming from states along the Delta lines folded at Gamma, are discriminated; their energy shift as a function of a superimposed field is evaluated, and their role in the QCSE is evidenced. Excitonic effects below and above the interband threshold are also included in our calculations; they contribute to a close reproduction of the experimental absorption spectra for different superimposed uniform electric fields.\" (literal)

Editore

• AIP, American institute of physics (Editore)

Prodotto di

• Teoria e modeling computazionale di materiali e processi per le nanoscienze (MD.P06.014.001) (Modulo)
• Nanodispositivi a semiconduttore (MD.P06.001.001) (Modulo)

Autore CNR

• MICHELE VIRGILIO (Persona)
• GIUSEPPE GROSSO (Unità di personale esterno)

Insieme di parole chiave

• Keywords of "Quantum-confined Stark effect in Ge/SiGe quantum wells: A tight-binding description" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• GIUSEPPE GROSSO (Unità di personale esterno)
• MICHELE VIRGILIO (Persona)

Prodotto

• Nanodispositivi a semiconduttore (MD.P06.001.001) (Modulo)
• Teoria e modeling computazionale di materiali e processi per le nanoscienze (MD.P06.014.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)

Editore di

• AIP, American institute of physics (Editore)

Insieme di parole chiave di

• Keywords of "Quantum-confined Stark effect in Ge/SiGe quantum wells: A tight-binding description" (Insieme di parole chiave)