Pulsed plasma ion source to create Si nanocrystals in SiO2 substrates (Articolo in rivista)

Type
Label
  • Pulsed plasma ion source to create Si nanocrystals in SiO2 substrates (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.apsusc.2008.08.030 (literal)
Alternative label
  • Lorusso A, Nassisi V, Congedo G, Lovergine N, Velardi L, Prete P (2009)
    Pulsed plasma ion source to create Si nanocrystals in SiO2 substrates
    in Applied surface science; Elsevier, Amsterdam (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Lorusso A, Nassisi V, Congedo G, Lovergine N, Velardi L, Prete P (literal)
Pagina inizio
  • 5401 (literal)
Pagina fine
  • 5404 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://apps.webofknowledge.com (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 255 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 10 (literal)
Note
  • ISI Web of Science (WOS) (literal)
  • Scopus (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Univ Bari, Dept Phys, I-70126 Bari, Italy 2. Univ Salento, Dept Phys, Lab Elettron Applicata & Strumentaz LEAS, I-73100 Lecce, Italy 3. Ist Nazl Fis Nucl, I-73100 Lecce, Italy 4. Univ Salento, Dept Innovat Engn, I-73100 Lecce, Italy 5. IMM, CNR, Unita Lecce, I-73100 Lecce, Italy (literal)
Titolo
  • Pulsed plasma ion source to create Si nanocrystals in SiO2 substrates (literal)
Abstract
  • A pulsed KrF excimer laser of irradiance of about 10(8) W/cm(2) was utilized to synthesize Si nanocrystals on SiO2/Si substrates. The results were compared with that ones obtained by applying low bias voltage to Si(1 0 0) target in order to control the kinetic energy of plasma ions. Glancing incidence X-ray diffraction spectra indicate the presence of silicon crystalline phases, i.e. (1 1 1) and (2 2 0), on SiO2/Si substrates. The average Si nanocrystal size was estimated to be about 45 nm by using the Debye-Scherrer formula. Scanning electron microscopy and atomic force microscopy images showed the presence of nanoparticles of different size and shape. Their distribution exhibits a maximum concentration at 49 nm and a fraction of 14% at 15 nm. (literal)
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