http://www.cnr.it/ontology/cnr/individuo/prodotto/ID36523
Pulsed plasma ion source to create Si nanocrystals in SiO2 substrates (Articolo in rivista)
- Type
- Label
- Pulsed plasma ion source to create Si nanocrystals in SiO2 substrates (Articolo in rivista) (literal)
- Anno
- 2009-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.apsusc.2008.08.030 (literal)
- Alternative label
Lorusso A, Nassisi V, Congedo G, Lovergine N, Velardi L, Prete P (2009)
Pulsed plasma ion source to create Si nanocrystals in SiO2 substrates
in Applied surface science; Elsevier, Amsterdam (Paesi Bassi)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Lorusso A, Nassisi V, Congedo G, Lovergine N, Velardi L, Prete P (literal)
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- ISI Web of Science (WOS) (literal)
- Scopus (literal)
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- 1. Univ Bari, Dept Phys, I-70126 Bari, Italy
2. Univ Salento, Dept Phys, Lab Elettron Applicata & Strumentaz LEAS, I-73100 Lecce, Italy
3. Ist Nazl Fis Nucl, I-73100 Lecce, Italy
4. Univ Salento, Dept Innovat Engn, I-73100 Lecce, Italy
5. IMM, CNR, Unita Lecce, I-73100 Lecce, Italy (literal)
- Titolo
- Pulsed plasma ion source to create Si nanocrystals in SiO2 substrates (literal)
- Abstract
- A pulsed KrF excimer laser of irradiance of about 10(8) W/cm(2) was utilized to synthesize Si nanocrystals on SiO2/Si substrates. The results were compared with that ones obtained by applying low bias voltage to Si(1 0 0) target in order to control the kinetic energy of plasma ions. Glancing incidence X-ray diffraction spectra indicate the presence of silicon crystalline phases, i.e. (1 1 1) and (2 2 0), on SiO2/Si substrates. The average Si nanocrystal size was estimated to be about 45 nm by using the Debye-Scherrer formula. Scanning electron microscopy and atomic force microscopy images showed the presence of nanoparticles of different size and shape. Their distribution exhibits a maximum concentration at 49 nm and a fraction of 14% at 15 nm. (literal)
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