Irradiation damage in graphene on SiO2 probed by local mobility measurements (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Irradiation damage in graphene on SiO2 probed by local mobility measurements (Articolo in rivista) (literal)

Anno

• 2009-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.3280860 (literal)

Alternative label

• Giannazzo F; Sonde S; Raineri V; Rimini E (2009)
  Irradiation damage in graphene on SiO2 probed by local mobility measurements
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Giannazzo F; Sonde S; Raineri V; Rimini E (literal)

Pagina inizio

• 263109 (literal)

Pagina fine

• 263109 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 95 (literal)

Rivista

• Applied physics letters (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. CNR IMM, I-95121 Catania, Italy 2. Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy (literal)

Titolo

• Irradiation damage in graphene on SiO2 probed by local mobility measurements (literal)

Abstract

• Using a method based on scanning capacitance spectroscopy, local measurements of the electron mean free path (l) and mobility (mu) have been carried out on single layers of graphene (SLG) mechanically exfoliated from highly oriented pyrolytic graphite and deposited on SiO2/Si. Lateral inhomogeneity of l and mu was found both on pristine and ion irradiated SLG with different C ion fluences (from 10(13) to 10(14) cm(-2)), with an increasing spread in the distribution of l and mu for larger fluences. Before irradiation, the spread was explained by the inhomogeneous distribution of charged impurities on SLG surface and/or at the interface with SiO2. After irradiation, lattice vacancies cause a local reduction of mu in the damaged regions. (literal)

Prodotto di

• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FILIPPO GIANNAZZO (Persona)
• SUSHANT SUDAM SONDE (Unità di personale esterno)
• VITO RAINERI (Persona)

Insieme di parole chiave

• Keywords of "Irradiation damage in graphene on SiO2 probed by local mobility measurements" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)
• SUSHANT SUDAM SONDE (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)

Insieme di parole chiave di

• Keywords of "Irradiation damage in graphene on SiO2 probed by local mobility measurements" (Insieme di parole chiave)