An equivalent-circuit model for shunt-connected coplanar microelectromechanical system switches for high frequency applications (Articolo in rivista)

Type
Label
  • An equivalent-circuit model for shunt-connected coplanar microelectromechanical system switches for high frequency applications (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3003568 (literal)
Alternative label
  • Bartolucci G, Marcelli R, Catoni S, Margesin B, Giacomozzi F, Mulloni V, Farinelli P (2008)
    An equivalent-circuit model for shunt-connected coplanar microelectromechanical system switches for high frequency applications
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Bartolucci G, Marcelli R, Catoni S, Margesin B, Giacomozzi F, Mulloni V, Farinelli P (literal)
Pagina inizio
  • 845141 (literal)
Pagina fine
  • 845148 (literal)
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  • 104 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 8 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 8 (literal)
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a Department of Electronic Engineering, University of Roma Tor Vergata, via del Politecnico 1, 00133 Roma, Italy b CNR-IMM Roma, via del Fosso del Cavaliere 100, 00133 Roma, Italy c Fondazione Bruno Kessler - Centro per la Ricerca Scientifica e Tecnologica, via Sommarive 18, 38050 Povo (TN), Italy d Department of Electronic and Information Engineering, Universit? Degli Studi di Perugia, via G. Duranti 93, 06125 Perugi, Italy (literal)
Titolo
  • An equivalent-circuit model for shunt-connected coplanar microelectromechanical system switches for high frequency applications (literal)
Abstract
  • In this paper, a circuit model to predict the microwave response of a shunt-connected capacitive microelectromechanical coplanar switch is proposed. The numerical values of the lumped elements composing the equivalent circuit are computed by means of a fully analytic approach. In particular, the contribution of resistive and inductive parasitic elements has been evaluated by using closed-form expressions. Configurations characterized by different technological solutions have been obtained and modeled. Simulations performed with the proposed approach correlate very well with actual measurements. (literal)
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