Time response of two-dimensional gas-based vertical field metal-semiconductor-metal photodetectors (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Time response of two-dimensional gas-based vertical field metal-semiconductor-metal photodetectors (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1109/TED.2008.925242 (literal)

Alternative label

• Zhao X, Currie M, Cola A, Quaranta F, Gallo E, Spanier J, Nabet B (2008)
  Time response of two-dimensional gas-based vertical field metal-semiconductor-metal photodetectors
  in I.E.E.E. transactions on electron devices
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Zhao X, Currie M, Cola A, Quaranta F, Gallo E, Spanier J, Nabet B (literal)

Pagina inizio

• 1762 (literal)

Pagina fine

• 1770 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 55 (literal)

Rivista

• I.E.E.E. transactions on electron devices (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 7 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Drexel Univ, Dept Elect & Comp Engn, Philadelphia, PA 19104 USA USN, Res Lab, Washington, DC 20375 USA Natl Res Council IMM CNR, Inst Microelect & Microsyst, I-73100 Lecce, Italy (literal)

Titolo

• Time response of two-dimensional gas-based vertical field metal-semiconductor-metal photodetectors (literal)

Abstract

• We have fabricated and characterized 2-D gas-based, including 2-D electron gas (2DEG) and 2-D hole gas (2DHG), heterostructure metal-semiconductor-metal (MSM) photodetectors on GaAs. Both the high-speed measurement of time response and the simulation results show that a vertical field developed in the active absorption region due to the delta-doping layer facilitates one type of photogenerated carrier transport. In addition, the confined carriers facilitate collection of the optically generated carriers that reach them. The vertical field in the MSM. structure that is created by a 2-D gas transforms a traditional lateral MSM device to a vertical one, although remaining as a planar structure, thus allowing a device design for high-speed performance without sacrificing the external quantum efficiency. (literal)

Prodotto di

• materiali e processi per la realizzazione di dispositivi per la conversione di energia (MD.P05.019.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FABIO QUARANTA (Unità di personale interno)
• ADRIANO COLA (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• materiali e processi per la realizzazione di dispositivi per la conversione di energia (MD.P05.019.001) (Modulo)

Autore CNR di

• ADRIANO COLA (Unità di personale interno)
• FABIO QUARANTA (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• I.E.E.E. transactions on electron devices (Rivista)