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Structural and morphological characterisation of heteroepitaxial CeO2 films grown on YSZ (100) and TiO2 (001) by metal-organic chemical vapour deposition (Articolo in rivista)
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- Label
- Structural and morphological characterisation of heteroepitaxial CeO2 films grown on YSZ (100) and TiO2 (001) by metal-organic chemical vapour deposition (Articolo in rivista) (literal)
- Anno
- 2003-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/S0921-5107(02)00646-3 (literal)
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Lo Nigro, R; Malandrino, G; Fragala, IL (2003)
Structural and morphological characterisation of heteroepitaxial CeO2 films grown on YSZ (100) and TiO2 (001) by metal-organic chemical vapour deposition
in Materials Science and Engineering B; ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE (Svizzera)
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- Lo Nigro, R; Malandrino, G; Fragala, IL (literal)
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- ISI Web of Science (WOS) (literal)
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- Univ Catania, Dipartimento Sci Chim, INSTM, I-95125 Catania, Italy; CNR, IMM, Sez Catania, I-95125 Catania, Italy (literal)
- Titolo
- Structural and morphological characterisation of heteroepitaxial CeO2 films grown on YSZ (100) and TiO2 (001) by metal-organic chemical vapour deposition (literal)
- Abstract
- We report on the deposition of <100> CeO2 buffer layers by metal-organic chemical vapour deposition (MOCVD) on TiO2(001) and YSZ(100) substrates from Ce(111) 1,1,1,5,5,5-hexafluoro-2,4-pentanedionato diglyme adduct (Ce(hfa)(3).diglyme). X-ray diffraction techniques (theta-2theta, omega-scans, pole figures) have been used to determine out-of-plane and in-plane alignments of CeO2 films. Films on both YSZ(100) and TiO2 (001) are <100> oriented beyond 450 degreesC deposition temperatures. Rocking curve full width half maximum (FWHM) values and pole figure patterns point to good out-of-plane and in-plane alignments. Epitaxial growth on rutile substrate is obtained below 750 degreesC. Morphological characterisation indicates smooth and homogeneous surfaces. (literal)
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