Electroluminescence properties of SiOx layers implanted with rare earth ions (Articolo in rivista)

Type
Label
  • Electroluminescence properties of SiOx layers implanted with rare earth ions (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.nimb.2003.11.038 (literal)
Alternative label
  • Irrera, A; Miritello, M; Pacifici, D; Franzo, G; Priolo, F; Iacona, F; Sanfilippo, D; Di Stefano, G; Fallica, PG (2004)
    Electroluminescence properties of SiOx layers implanted with rare earth ions
    in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Irrera, A; Miritello, M; Pacifici, D; Franzo, G; Priolo, F; Iacona, F; Sanfilippo, D; Di Stefano, G; Fallica, PG (literal)
Pagina inizio
  • 222 (literal)
Pagina fine
  • 227 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 216 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, Sez Catania, I-95121 Catania, Italy; Catania Univ, INFM, I-95123 Catania, Italy; Catania Univ, Dipartimento Fis & Astronom, I-95123 Catania, Italy; STMicroelect, I-95121 Catania, Italy (literal)
Titolo
  • Electroluminescence properties of SiOx layers implanted with rare earth ions (literal)
Abstract
  • In this work we have studied the structural, electrical and optical properties of MOS devices, where the dielectric layer consists of a SiOx (x < 2) thin film prepared by plasma enhanced chemical vapor deposition and implanted with rare earth ions. As deposited SiOx films were annealed at high temperature (> 1000 degreesC) to induce the separation of the Si and SiO2 phases with the formation of Si nanocrystals embedded in the insulating matrix. Devices based on this system present a strong light emission at room temperature at a wavelength of about 900 nm. Devices emitting at different wavelengths have been fabricated by implanting SiOx films with Er or Tin. Devices based on Er-doped Si nanoclusters film exhibit an intense 1.54 mum room temperature electroluminescence (EL). We have calculated the excitation cross-section for Er ions in presence of Si nanoclusters under electrical pumping and the value is similar to1 x 10(-14) cm(2), comparable to the value found for the electrical excitation of undoped Si nanocrystals. Finally, devices based on Tm-doped Si nanoclusters exhibit two EL peaks at 0.78 and 1.7 mum. (literal)
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