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Surface effects on the growth of solution processed pentacene thin films (Articolo in rivista)
- Type
- Label
- Surface effects on the growth of solution processed pentacene thin films (Articolo in rivista) (literal)
- Anno
- 2008-01-01T00:00:00+01:00 (literal)
- Alternative label
Musumeci C, Cascio C, Scandurra A, Indelli GF, Bongiorno C, Ravesi S, Pignataro B (2008)
Surface effects on the growth of solution processed pentacene thin films
in Surface science
(literal)
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- Musumeci C, Cascio C, Scandurra A, Indelli GF, Bongiorno C, Ravesi S, Pignataro B (literal)
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- ISI Web of Science (WOS) (literal)
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- [Pignataro, Bruno] Univ Palermo, Dipartimento Chim Fis F Accascina, I-90128 Palermo, Italy; [Musumeci, Chiara; Cascio, Claudia; Scandurra, Antonino; Indelli, Giuseppe F.; Ravesi, Sebastiano; Pignataro, Bruno] PLAST ICs, I-95121 Catania, Italy; [Musumeci, Chiara; Cascio, Claudia; Scandurra, Antonino; Indelli, Giuseppe F.] Superlab Consorzio Catania Ric, I-95121 Catania, Italy; [Bongiorno, Corrado] IMM, I-95121 Catania, Italy; [Ravesi, Sebastiano] ST Microelect, I-95121 Catania, Italy (literal)
- Titolo
- Surface effects on the growth of solution processed pentacene thin films (literal)
- Abstract
- 13,6-N-Sulfinylacetamidopentacene (SAP) has been transferred on solid substrates both by water-rich environment and organic solvents without altering his chemical structure. Thermal conversion of SAP to pentacene leads to crystals showing similar features of vacuum-sublimated pentacene both in the bulk and thin-film phases. The thin-film phase is strongly affected by the substrate surface properties. Low energy Si-CH3 rich surfaces allow for the formation of compact micrometric crystals following a Volmer-Weber like growth with orientation suitable for field-effect carrier mobility. Screw dislocations along with straight edges are found on these systems as an indication of a loose interlayer interaction with respect to the lateral pi-pi intermolecular forces. In contrast, higher energy SiOH rich surfaces result in non-compact systems (Stransky-Krastanov like growth) arising by in-space randomly oriented crystals as well as by individual screw dislocations. (C) 2007 Elsevier B.V. All rights reserved. (literal)
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