Photoinduced absorption in B-doped hydrogenated amorphous silicon alloys applied to all-optical modulators (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Photoinduced absorption in B-doped hydrogenated amorphous silicon alloys applied to all-optical modulators (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.2833325 (literal)

Alternative label

• Summonte C, Della Corte FG, Nigro MA, Desalvo A (2008)
  Photoinduced absorption in B-doped hydrogenated amorphous silicon alloys applied to all-optical modulators
  in Journal of applied physics; American Institute of Physics, Melville [NY] (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Summonte C, Della Corte FG, Nigro MA, Desalvo A (literal)

Pagina inizio

• 023107-1 (literal)

Pagina fine

• 023107-7 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000103000002023107000001&idtype=cvips&doi=10.1063/1.2833325&prog=normal (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 103 (literal)

Rivista

• Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 7 (literal)

Note

• Scopu (literal)
• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e i Microsistemi CNR, IMM via Gobetti 101, Bologna, Italy 2Dipartimento di Informatica, Matematica, Elettronica e Trasporti, Università Mediterranea, via Graziella, Loc. Feo Di Vito, Reggio Calabria, Italy 3DICASM, University of Bologna, Viale Risorgimento 2, I-40136 Bologna, Italy (literal)

Titolo

• Photoinduced absorption in B-doped hydrogenated amorphous silicon alloys applied to all-optical modulators (literal)

Abstract

• All-optical modulators have been fabricated, based on the infrared photoinduced absorption produced within an optical waveguide upon visible light illumination. The modulation data are analyzed by means of simulation software based on a numerical mode solver. It is found that the modulation depth increases for pump illumination energy closer to the energy gap of the guiding material, while illumination at varying intensity shows a sublinear dependence of the photoinduced absorption. The results are discussed in terms of occupation statistics of gap states. It is shown that the major contribution to the photoinduced signal derives from the modulation of the occupation of tail states under illumination. Modeling of the phenomenon allows one to predict the behavior of a given device and opens the way to practical applications. © 2008 American Institute of Physics (literal)

Editore

• American Institute of Physics (Editore)

Prodotto di

• Sviluppo di tecnologie e realizzazione di dispositivi e microsistemi fotonici, fluidici e meccanici (MD.P05.011.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• CATERINA SUMMONTE (Persona)
• AGOSTINO DESALVO (Persona)

Insieme di parole chiave

• Parole chiave di "Photoinduced absorption in B-doped hydrogenated amorphous silicon alloys applied to all-optical modulators" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di tecnologie e realizzazione di dispositivi e microsistemi fotonici, fluidici e meccanici (MD.P05.011.001) (Modulo)

Autore CNR di

• CATERINA SUMMONTE (Persona)
• AGOSTINO DESALVO (Persona)

Editore di

• American Institute of Physics (Editore)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)

Insieme di parole chiave di

• Parole chiave di "Photoinduced absorption in B-doped hydrogenated amorphous silicon alloys applied to all-optical modulators" (Insieme di parole chiave)