Electromigration Reliability Assessment of Cu-based Metallization Systems by a Wafer-Level Approach (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Electromigration Reliability Assessment of Cu-based Metallization Systems by a Wafer-Level Approach (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1149/1.2767302 (literal)

Alternative label

• Impronta M; Marras A; De Munari I; Scorzoni A; Valentini MG (2007)
  Electromigration Reliability Assessment of Cu-based Metallization Systems by a Wafer-Level Approach
  in ECS transactions
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Impronta M; Marras A; De Munari I; Scorzoni A; Valentini MG (literal)

Pagina inizio

• 157 (literal)

Pagina fine

• 162 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 8 (literal)

Rivista

• ECS transactions (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 1 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Parma, DII, I-43100 Parma, Italy; CNR-IMM, I-40129 Bologna, Italy; STMicroelect, I-20041 Agrate Brianza, Italy; Univ Perugia, DIEI, I-06131 Perugia, Italy (literal)

Titolo

• Electromigration Reliability Assessment of Cu-based Metallization Systems by a Wafer-Level Approach (literal)

Abstract

• Recently, a fast improved isothermal method (ISOT) has been devised to characterize the electromigration (EM) wafer level reliability (WLR). In this paper, the usefulness of ISOT will be shown, not only for the aim of process monitoring in production, but also, when the method is applied carefully, to complement and, in perspective, to substitute the expensive standard package-level reliability (PLR) tests, currently used to assess the EM reliability. The complete methodological approach is described, as well as precautions to control the stress conditions and normalization procedures to account for the process parameter spread. Some results on double-damascene 90 nm Cu technology are shown. (literal)

Prodotto di

• Tecniche di caratterizzazione elettrica ed affidabilistica di dispositivi nanoelettronici e microelettronici ultrascalati (MD.P05.017.002) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ANDREA SCORZONI (Persona)
• MAURIZIO PIO IMPRONTA (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "Electromigration Reliability Assessment of Cu-based Metallization Systems by a Wafer-Level Approach" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Tecniche di caratterizzazione elettrica ed affidabilistica di dispositivi nanoelettronici e microelettronici ultrascalati (MD.P05.017.002) (Modulo)

Autore CNR di

• MAURIZIO PIO IMPRONTA (Unità di personale interno)
• ANDREA SCORZONI (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• ECS transactions (Rivista)

Insieme di parole chiave di

• Parole chiave di "Electromigration Reliability Assessment of Cu-based Metallization Systems by a Wafer-Level Approach" (Insieme di parole chiave)