Annealing Effects on Leakage Current and Epilayer Doping Concentration of p+n Junction 4H-SiC Diodes after Very High Neutron Irradiation (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Annealing Effects on Leakage Current and Epilayer Doping Concentration of p+n Junction 4H-SiC Diodes after Very High Neutron Irradiation (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.nima.2007.08.211 (literal)

Alternative label

• Moscatelli F; Scorzoni A; Poggi A; Nipoti R (2007)
  Annealing Effects on Leakage Current and Epilayer Doping Concentration of p+n Junction 4H-SiC Diodes after Very High Neutron Irradiation
  in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Moscatelli F; Scorzoni A; Poggi A; Nipoti R (literal)

Pagina inizio

• 173 (literal)

Pagina fine

• 176 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 583 (literal)

Rivista

• NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMM, Bologna, Italy Perugia University (literal)

Titolo

• Annealing Effects on Leakage Current and Epilayer Doping Concentration of p+n Junction 4H-SiC Diodes after Very High Neutron Irradiation (literal)

Abstract

• In this work we analyzed the annealing effects on SiC p+n diodes after very high 1 MeV neutron fluence. The diode structure is based on ion implanted p+ emitter in n-type epilayer with thickness equal to 5 µm and donor doping ND = 3×1015 cm-3. These devices were irradiated with 1 MeV neutrons at 4 different fluence values, logarithmically distributed in the range 1014-1016 cm-2. After irradiation the epilayer material became more resistive, as indicated by the reduction of the forward and reverse current density at a given voltage. In particular, after irradiation at the highest fluence value the average leakage current density at 100 V reverse bias decreased from 3 nA/cm2 to values of the order of 100 pA/cm2. After a neutron fluence of 1×1014 cm-2 the epilayer doping concentration decreased to 1.5´1015 cm-3. The samples underwent a sequence of thermal cycles first at 80°C and then at 200°C to verify if a damage recovery occurs in irradiated SiC samples, as in the case of silicon ones. After annealing at 80°C the reverse current further decreased, while the depletion voltage remained almost constant. After thermal cycles at 200°C the current decreased further and the depletion voltage slightly increased, showing a very low recovery of the damage. (literal)

Prodotto di

• Nuovi processi per la produzione di wafer di Carburo di Silicio e nuove applicazioni nell'ambito del fotovoltaico e dei MEMS (MD.P05.009.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ANDREA SCORZONI (Persona)
• ANTONELLA POGGI (Unità di personale interno)
• FRANCESCO MOSCATELLI (Unità di personale esterno)
• ROBERTA NIPOTI (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "Annealing Effects on Leakage Current and Epilayer Doping Concentration of p+n Junction 4H-SiC Diodes after Very High Neutron Irradiation" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nuovi processi per la produzione di wafer di Carburo di Silicio e nuove applicazioni nell'ambito del fotovoltaico e dei MEMS (MD.P05.009.001) (Modulo)

Autore CNR di

• ANTONELLA POGGI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)
• ANDREA SCORZONI (Persona)
• FRANCESCO MOSCATELLI (Unità di personale esterno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (Rivista)

Insieme di parole chiave di

• Parole chiave di "Annealing Effects on Leakage Current and Epilayer Doping Concentration of p+n Junction 4H-SiC Diodes after Very High Neutron Irradiation" (Insieme di parole chiave)