Characterization of ZnTe homo-epitaxial layers by means of synchrotron X-ray topography (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Characterization of ZnTe homo-epitaxial layers by means of synchrotron X-ray topography (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Alternative label

• Mizuno K, Okamoto H, Prete P, Lovergine N (2007)
  Characterization of ZnTe homo-epitaxial layers by means of synchrotron X-ray topography
  in Journal of Optoelectronics and Advanced Materials (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Mizuno K, Okamoto H, Prete P, Lovergine N (literal)

Pagina inizio

• 1273 (literal)

Pagina fine

• 1276 (literal)

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• 9 (literal)

Rivista

• Journal of Optoelectronics and Advanced Materials (Rivista)

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• 4 (literal)

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• 5 (literal)

Note

• Scopu (literal)
• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Shimane Univ, Dept Mat Sci, Matsue, Shimane 6908504, Japan; Kanazawa Univ, Dept Hlth Sci, Kanazawa, Ishikawa 9200942, Japan; CNR-IMM, Sez Lecce, I-73100 Lecce, Italy; Univ Lecce, Dept Innovat Engn, I-73100 Lecce, Italy (literal)

Titolo

• Characterization of ZnTe homo-epitaxial layers by means of synchrotron X-ray topography (literal)

Abstract

• Synchrotron X-ray reflection topography was used to evaluate the crystal quality of a ZnTe epilayer grown by MOVIPE on a low dislocation density (111) ZnTe substrate. The epilayer thicknesses were 0. 35 mu m and 3.0 mu m, and the growth temperature was 325 degrees C or 350 degrees C. Another specimen whose epilayer was grown at400 degrees C with 3.0 mu m thickness had a 0.35 mu m thick buffer layer grown at 325 degrees C. Reflection topographs and rocking curves were recorded from four equivalent 224 reflections using an X-ray wavelength of 0.1578 mu m. Topographs of specimens with the epilayer grown at 325 degrees C and 350'C did not show images of line defects, such as misfit dislocations. However, we could observe line images in the specimen with the epilayer grown at 4000 degrees C and with the buffer layer grown at 325 degrees C. The line images were not observed in transmitted X-ray Laue topographs using a white X-ray beam. Therefore, it was concluded that the line defects existed in the epilayer and not the substrate. In addition, topographs taken with other diffraction planes showed the same images except for reversed image contrast Therefore, the defects did not have characteristic strain fields such as for dislocations, and they are stacking faults grown in the epilayer during high temperature growth. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Microsistemi ed optoelettronica a base di semiconduttori composti (MD.P05.014.003) (Modulo)

Autore CNR

• PAOLA PRETE (Persona)

Insieme di parole chiave

• Keywords of "Characterization of ZnTe homo-epitaxial layers by means of synchrotron X-ray topography" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Microsistemi ed optoelettronica a base di semiconduttori composti (MD.P05.014.003) (Modulo)

Autore CNR di

• PAOLA PRETE (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of Optoelectronics and Advanced Materials (Rivista)

Insieme di parole chiave di

• Keywords of "Characterization of ZnTe homo-epitaxial layers by means of synchrotron X-ray topography" (Insieme di parole chiave)