Reliability assessment of multi-via Cu-damascene structures by wafer-level isothermal electromigration tests (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Reliability assessment of multi-via Cu-damascene structures by wafer-level isothermal electromigration tests (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.microrel.2007.07.002 (literal)

Alternative label

• Marras A; Impronta M; De Munari I; Valentini MG; Scorzoni A (2007)
  Reliability assessment of multi-via Cu-damascene structures by wafer-level isothermal electromigration tests
  in Microelectronics and reliability; Pergamon-Elsevier Science Ltd., Oxford (Regno Unito)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Marras A; Impronta M; De Munari I; Valentini MG; Scorzoni A (literal)

Pagina inizio

• 1492 (literal)

Pagina fine

• 1496 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 47 (literal)

Rivista

• Microelectronics and reliability (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Parma, DII, I-43100 Parma, Italy; CNR-IMM, I-40129 Bologna, Italy; STMicroelect, I-20041 Agrate Brianza, Italy; Univ Perugia, DIEI, I-06131 Perugia, Italy (literal)

Titolo

• Reliability assessment of multi-via Cu-damascene structures by wafer-level isothermal electromigration tests (literal)

Abstract

• In this paper, the isothermal wafer-level electromigration test method has been used to compare the resistance to electromigration damage of multi-level structures, realized by dual-damascene copper technology with a variable number of vias. \"Upstream\" and \"downstream\" structures have been defined, depending on the metal level where the line under test was located, with respect to the metal level where current and voltage taps were drawn. Not unexpectedly, the most critical current path for electromigration has been found in downstream structures, where the electron flow is entering the line under test. Worthy of note, a well defined dependence of the time to failure on the number of vias has been observed for these structures. Activation energy and current-density acceleration coefficient have been extracted and a quantitative relation is proposed to relate the lifetime expectancy to the number of vias. (literal)

Editore

• Pergamon-Elsevier Science Ltd. (Editore)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Tecniche di caratterizzazione elettrica ed affidabilistica di dispositivi nanoelettronici e microelettronici ultrascalati (MD.P05.017.002) (Modulo)

Autore CNR

• ANDREA SCORZONI (Persona)
• MAURIZIO PIO IMPRONTA (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Reliability assessment of multi-via Cu-damascene structures by wafer-level isothermal electromigration tests" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Tecniche di caratterizzazione elettrica ed affidabilistica di dispositivi nanoelettronici e microelettronici ultrascalati (MD.P05.017.002) (Modulo)

Autore CNR di

• MAURIZIO PIO IMPRONTA (Unità di personale interno)
• ANDREA SCORZONI (Persona)

Editore di

• Pergamon-Elsevier Science Ltd. (Editore)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Microelectronics and reliability (Rivista)

Insieme di parole chiave di

• Keywords of "Reliability assessment of multi-via Cu-damascene structures by wafer-level isothermal electromigration tests" (Insieme di parole chiave)