Acceptor, compensation, and mobility profiles in multiple Al implanted 4H-SiC (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Acceptor, compensation, and mobility profiles in multiple Al implanted 4H-SiC (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.2813022 (literal)

Alternative label

• Giannazzo F; Roccaforte F; Raineri V (2007)
  Acceptor, compensation, and mobility profiles in multiple Al implanted 4H-SiC
  in Applied physics letters; American Institute of Physics, Melville [NY] (Stati Uniti d'America); American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Giannazzo F; Roccaforte F; Raineri V (literal)

Pagina inizio

• 202104 (literal)

Pagina fine

• 202104 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 91 (literal)

Rivista

• Applied physics letters (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMM, I-95121 Catania, Italy (literal)

Titolo

• Acceptor, compensation, and mobility profiles in multiple Al implanted 4H-SiC (literal)

Abstract

• In this letter, we studied the effect of the annealing temperature (from 1400 to 1650 degrees C) on the acceptor, compensation, and mobility depth profiles in 4H-SiC implanted with multiple energy (40-550 keV) and medium dose (1x10(13) cm(-2)) Al ions. Scanning capacitance microscopy and scanning spreading resistance microscopy were jointly used to determine those depth profiles with nanometric resolution. It was demonstrated that the electrical activation in the Al implanted layer at increasing annealing temperatures was the result of a counterbalance between the increase in the acceptor concentration and the decrease in the percentage compensation. (literal)

Editore

• American Institute Of Physics (AIP) (Editore)
• American Institute of Physics (Editore)

Prodotto di

• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Autore CNR

• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)
• FABRIZIO ROCCAFORTE (Persona)

Insieme di parole chiave

• Keywords of "Acceptor, compensation, and mobility profiles in multiple Al implanted 4H-SiC" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Editore di

• American Institute of Physics (Editore)
• American Institute Of Physics (AIP) (Editore)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)

Insieme di parole chiave di

• Keywords of "Acceptor, compensation, and mobility profiles in multiple Al implanted 4H-SiC" (Insieme di parole chiave)