Kinetics of ion-beam damage in lithium niobate (Articolo in rivista)

Type
Label
  • Kinetics of ion-beam damage in lithium niobate (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2714772 (literal)
Alternative label
  • Garcia-Navarro A; Agullo-Lopez F; Bianconi M; Olivares J; Garcia G (2007)
    Kinetics of ion-beam damage in lithium niobate
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Garcia-Navarro A; Agullo-Lopez F; Bianconi M; Olivares J; Garcia G (literal)
Pagina inizio
  • 83506 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 101 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 8 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Autonoma Madrid, CMAM, E-28049 Madrid, Spain; CNR-IMM, Sez Bologna, I-40129 Bologna, Italy; CSIC, Inst Opt, E-28006 Madrid, Spain; CELLS, E-08193 Bellaterra, Barcelona, Spain; Univ Autonoma Madrid, Dept Fis Mat, E-28049 Madrid, Spain (literal)
Titolo
  • Kinetics of ion-beam damage in lithium niobate (literal)
Abstract
  • The damage kinetics induced by irradiation with a diversity of swift ions (O at 5 MeV; F at 5.1 MeV; Si at 5, 7.5, and 41 MeV; and Cl at 11 and 46 MeV) has been investigated in the range of 10(12)-10(15) at./cm(2). It covers from the initial stage where single damage tracks are isolated and well separated, up to the stage where a full amorphous layer is produced. The damage is characterized by the areal fraction of disorder derived from the Rutherford backscattering/channeling spectra. The data approximately fit an abrupt Avrami-type dependence with fluence. The fluence value at which 50% of the sample surface becomes disordered shows a clear increasing trend with the electronic stopping power of the ion. The trend is consistent with Monte Carlo simulations based on a recent model for defect creation. Moreover, the quantitative agreement for the defect generation rate appears also reasonable. (literal)
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