Thermo-electro-optical analysis of an integrated waveguide-vanishing-based optical modulator (Articolo in rivista)

Type
Label
  • Thermo-electro-optical analysis of an integrated waveguide-vanishing-based optical modulator (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1088/1464-4258/8/7/S42 (literal)
Alternative label
  • Zaccuri R C, Coppola G, Iodice M (2006)
    Thermo-electro-optical analysis of an integrated waveguide-vanishing-based optical modulator
    in Journal of optics. A, Pure and applied optics (Print); IOP Publishing Ltd. (Institute of Physics Publishing Ltd), "Bristol ; London" (Regno Unito)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Zaccuri R C, Coppola G, Iodice M (literal)
Pagina inizio
  • 567 (literal)
Pagina fine
  • 573 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 8 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Istituto per la Microelettronica e Microsistemi, Sezione di Napoli, Consiglio Nazionale delle Ricerche, Via P Castellino 111, 80123, Napoli, Italy (literal)
Titolo
  • Thermo-electro-optical analysis of an integrated waveguide-vanishing-based optical modulator (literal)
Abstract
  • Silicon is the most widely used material in the microelectronics industry and it is becoming more widespread in integrated optic and opto-electronic fields. We present the thermo-electro-optical analysis of an integrated waveguide-vanishing-based optical modulator based on the free carrier dispersion effect. This particular structure allows one to obtain a planar device, with an easier CMOS compatible microelectronic integration. The implantation processes have been carefully tuned in order to get higher doping uniformity and a sharp profile. The process-flow is defined using the 2D process simulation software ATHENA ( SILVACO International). The 2D semiconductor device simulation package ATLAS ( SILVACO International) has been employed to analyse the coupled electro-thermal behaviour of our modulator in static and dynamic conditions. The electrical section of the modulation acts as a lateral p-i-n diode. The resulting channel waveguide shows single mode operation and propagation losses of about 10 dB cm(-1). The modulator optical behaviour is based on the vanishing of the lateral confinement in the rib region. Results show that an optical modulation depth close to 100% can be reached with a power expense of about 650 mW and an operation -3 dB bandwidth of about 25 MHz. (literal)
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