Influence of the sputtering system's vacuum level on the properties of indium tin oxide films (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Influence of the sputtering system's vacuum level on the properties of indium tin oxide films (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Alternative label

• Kana MGZ, Centurioni E, Iencinella D, Summonte C (2006)
  Influence of the sputtering system's vacuum level on the properties of indium tin oxide films
  in Thin solid films (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Kana MGZ, Centurioni E, Iencinella D, Summonte C (literal)

Pagina inizio

• 203 (literal)

Pagina fine

• 208 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 500 (literal)

Rivista

• Thin solid films (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Sez Bologna, I-40129 Bologna, Italy; Univ Bologna, DICASM, I-40136 Bologna, Italy; Phys Adv Lab, Abuja, Nigeria (literal)

Titolo

• Influence of the sputtering system's vacuum level on the properties of indium tin oxide films (literal)

Abstract

• The influence of the chamber residual pressure level in the radio frequency magnetron sputtering process on the electrical, optical and structural properties of indium thin oxide (ITO) is investigated. Several ITO films were deposited at various residual pressure levels on Coming glass using In2O3:SnO2 target in argon atmosphere and without the addition of oxygen partial pressure. It is found that a very good vacuum is associated to metallic films and results in less transparent ITO films, with some powder formation on the surface. On the contrary highly transparent and conducting films are produced at a higher residual pressure. The best deposition conditions are addressed for ITO films as transparent conducting oxide layers in silicon heterojunction solar cells. Using the optimal vacuum level for ITO fabrication, a maximum short circuit current of 36.6 mA/cm(2) and a fill-factor of 0.78 are obtained for solar cells on textured substrates with a device conversion efficiency of 16.2%. (literal)

Prodotto di

• Sviluppo di tecnologie e realizzazione di dispositivi e microsistemi fotonici, fluidici e meccanici (MD.P05.011.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• CATERINA SUMMONTE (Persona)
• DANIELE IENCINELLA (Unità di personale esterno)
• EMANUELE CENTURIONI (Persona)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di tecnologie e realizzazione di dispositivi e microsistemi fotonici, fluidici e meccanici (MD.P05.011.001) (Modulo)

Autore CNR di

• CATERINA SUMMONTE (Persona)
• EMANUELE CENTURIONI (Persona)
• DANIELE IENCINELLA (Unità di personale esterno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Thin solid films (Rivista)