Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4H-SiC Schottky diodes (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4H-SiC Schottky diodes (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.2158501 (literal)

Alternative label

• Roccaforte F, Libertino S, Raineri V, Ruggiero A, Massimino V, Calcagno L (2006)
  Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4H-SiC Schottky diodes
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Roccaforte F, Libertino S, Raineri V, Ruggiero A, Massimino V, Calcagno L (literal)

Pagina inizio

• 13515 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 99 (literal)

Rivista

• Journal of applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR IMM, Sez Catania, I-95121 Catania, Italy; Catania Univ, Dipartimento Fis & Astron, I-95123 Catania, Italy. (literal)

Titolo

• Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4H-SiC Schottky diodes (literal)

Abstract

• In this paper, the formation and evolution of defects induced by ion irradiation with 1 MeV Si+ ions in Ni2Si/4H-SiC Schottky diodes were studied and correlated with the electrical properties of the contacts. The current-voltage characteristics of the contacts monitored before and after irradiation showed an increase of the Schottky barrier height, of the series resistance, and of the leakage current with increasing irradiation fluence. The changes in the barrier height and in the series resistance values could be attributed to the dopant deactivation in the near-interface region, while the increase of the leakage current was associated with the formation of irradiation-induced defects. These defects showed an evolution with increasing irradiation fluence. Moreover, a combination of deep-level transient spectroscopy and current-voltage measurements of the diodes allowed us to demonstrate that the Z(1)/Z(2) center of 4H-SiC has the major influence on the increase of the diodes leakage current in the irradiated material. (literal)

Prodotto di

• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FABRIZIO ROCCAFORTE (Persona)
• SEBANIA LIBERTINO (Unità di personale interno)
• VITO RAINERI (Persona)

Insieme di parole chiave

• Keywords of "Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4H-SiC Schottky diodes" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• SEBANIA LIBERTINO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)

Insieme di parole chiave di

• Keywords of "Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4H-SiC Schottky diodes" (Insieme di parole chiave)