An MOCVD approach to high-k praseodymium-based films (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• An MOCVD approach to high-k praseodymium-based films (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1002/cvde.200500382 (literal)

Alternative label

• Lo Nigro R, Malandrino G, Toro RG, Fragala IL (2006)
  An MOCVD approach to high-k praseodymium-based films
  in Chemical vapor deposition (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Lo Nigro R, Malandrino G, Toro RG, Fragala IL (literal)

Pagina inizio

• 109 (literal)

Pagina fine

• 124 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 12 (literal)

Rivista

• Chemical vapor deposition (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Catania, Dipartimento Sci Chim, I-95125 Catania, Italy; INSTM, UdR Catania, I-95125 Catania, Italy; CNR, IMM, I-95127 Catania, Italy (literal)

Titolo

• An MOCVD approach to high-k praseodymium-based films (literal)

Abstract

• New high-k dielectric thin films have become of increasing interest over the last few years in the search for an alternative material to SiO2 gate insulators in MOS devices. Lanthanide oxides have been studied as potential candidates for SiO2 replacement. In this review, a description of the different CVD approaches to fabricating praseodymium oxide and silicate films with dielectric properties is presented. In particular, thermally activated and liquid-injection metal-organic (MO) CVD as well as atomic layer deposition (ALD), developed in recent years, are discussed. Examples highlighting the importance of different praseodymium precursors oil the deposited phases are given. Special emphasis is placed upon deposition parameters crucial to obtain Pr2O3 films and upon interfacial characterization. In addition, dielectric properties have been correlated to structural and compositional characteristics of praseodymium-containing films. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)

Autore CNR

• ROBERTA GRAZIA TORO (Unità di personale interno)
• RAFFAELLA LO NIGRO (Unità di personale interno)

Insieme di parole chiave

• Keywords of "An MOCVD approach to high-k praseodymium-based films" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)

Autore CNR di

• RAFFAELLA LO NIGRO (Unità di personale interno)
• ROBERTA GRAZIA TORO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Chemical vapor deposition (Rivista)

Insieme di parole chiave di

• Keywords of "An MOCVD approach to high-k praseodymium-based films" (Insieme di parole chiave)