The role of the AlGaAs doping level on the optical gain of two-dimensional electron gas photodetectors (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• The role of the AlGaAs doping level on the optical gain of two-dimensional electron gas photodetectors (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1007/s11664-004-0281-9 (literal)

Alternative label

• Nabet B, Romero MA, Cola A, Quaranta F (2004)
  The role of the AlGaAs doping level on the optical gain of two-dimensional electron gas photodetectors
  in Journal of electronic materials
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Nabet B, Romero MA, Cola A, Quaranta F (literal)

Pagina inizio

• 123 (literal)

Pagina fine

• 127 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 33 (literal)

Rivista

• Journal of electronic materials (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 2 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Drexel Univ, ECE Dept, Philadelphia, PA 19104 USA; Univ Sao Paulo, EESC, BR-13560 Sao Carlos, Brazil; CNRIME, I-73100 Lecce, Italy (literal)

Titolo

• The role of the AlGaAs doping level on the optical gain of two-dimensional electron gas photodetectors (literal)

Abstract

• We compare the optical response of two modulation-doped heterojunction photodetectors with identical growth structure, differing only in the doping level of the wide band material. The larger photoresponse of the higher doped device cannot be explained as photoconductive gain because neither the transit time nor the recombination lifetimes are substantially altered by the change in doping.. Alternatively, we propose to explain the results on the basis of an optical gating effect. It is shown that proper control of the two-dimensional electron gas (2-DEG) channel population in dark conditions allows one to optimize optical responsivity and external quantum efficiency. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FABIO QUARANTA (Unità di personale interno)
• ADRIANO COLA (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• ADRIANO COLA (Unità di personale interno)
• FABIO QUARANTA (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of electronic materials (Rivista)