Tailoring the Ti/4H-SiC Schottky barrier by ion irradiation (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Tailoring the Ti/4H-SiC Schottky barrier by ion irradiation (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Alternative label

• Roccaforte, F; Bongiorno, C; La Via, F; Raineri, V (2004)
  Tailoring the Ti/4H-SiC Schottky barrier by ion irradiation
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Roccaforte, F; Bongiorno, C; La Via, F; Raineri, V (literal)

Pagina inizio

• 6152 (literal)

Pagina fine

• 6154 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 85 (literal)

Rivista

• Applied physics letters (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR IMM, Sez Catania, I-95121 Catania, Italy (literal)

Titolo

• Tailoring the Ti/4H-SiC Schottky barrier by ion irradiation (literal)

Abstract

• The effects of ion irradiation on the Ti/4H-SiC Schottky barrier are discussed. The Ti/SiC interfacial region was modified by irradiating Schottky diodes with 8 MeV Si+4 ions at fluences between 1x10(9) and 1x10(12) ions/cm(2). By increasing the ion fluence, an increase of the Schottky barrier Phi(B) occurs, from the value of 1.05 eV after preparation to the value of 1.21 eV after irradiation at a fluence of 1x10(12) ions/cm(2), without substantial changes in the ideality factor (n=1.09). Along with the barrier height increase, a decrease of the leakage current of about two orders of magnitude was observed after irradiation. The results were interpreted in terms of the structural and electrical modification of the interfacial region. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• VITO RAINERI (Persona)
• FRANCESCO LA VIA (Unità di personale interno)
• FABRIZIO ROCCAFORTE (Persona)
• CORRADO BONGIORNO (Unità di personale interno)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• FRANCESCO LA VIA (Unità di personale interno)
• CORRADO BONGIORNO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)