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Structural and electrical characterization of n(+)-type ion-implanted 6H-SiC (Articolo in rivista)

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Structural and electrical characterization of n(+)-type ion-implanted 6H-SiC (Articolo in rivista) (literal)

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Goghero, D; Giannazzo, F; Raineri, V; Musumeci, P; Calcagno, L (2004)
Structural and electrical characterization of n(+)-type ion-implanted 6H-SiC
in EPJ. Applied physics (Print)
(literal)

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CNR, IMM, Sez Catania, I-95121 Catania, Italy; Dipartimento Fis & Astron, I-95123 Catania, Italy (literal)

Titolo

Structural and electrical characterization of n(+)-type ion-implanted 6H-SiC (literal)

Abstract

The influence of different annealing procedures on both structural and electrical characteristics is investigated for 6H-SiC implanted with nitrogen in the doping concentration range of 1x10(18)-1x10(20) cm(-3) by Transmission Electron Microscopy and Scanning Capacitance Microscopy. The poor electrical activation of N+ ions is correlated to the formation of a high density of precipitates in the implanted layer when increasing the doping concentration. A rapid thermal pre-annealing combined with conventional furnace annealing is effective to improve the active fraction but the presence of the precipitates overwhelms this effect for high doping concentration (>1x10(19) cm(-3)). (literal)

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