http://www.cnr.it/ontology/cnr/individuo/prodotto/ID35738

Silicon heterojunction solar cell: A new buffer layer concept with low-temperature epitaxial silicon (Articolo in rivista)

Type

Articolo in rivista (Classe)
Prodotto della ricerca (Classe)

Label

Silicon heterojunction solar cell: A new buffer layer concept with low-temperature epitaxial silicon (Articolo in rivista) (literal)

Anno

2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

10.1109/TED.2004.836801 (literal)

Alternative label

Centurioni E; Iencinella D; Rizzoli R; Zignani F. (2004)
Silicon heterojunction solar cell: A new buffer layer concept with low-temperature epitaxial silicon
in I.E.E.E. transactions on electron devices; Institute of Electrical and Electronics Engineers, NEW York (Stati Uniti d'America)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Centurioni E; Iencinella D; Rizzoli R; Zignani F. (literal)

Pagina inizio

1818 (literal)

Pagina fine

1824 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1347400 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

51 (literal)

Rivista

I.E.E.E. transactions on electron devices (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

7 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

11 (literal)

Note

Scopu (literal)
ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

CNR, Institute for Microelectronics & Microsystem, UOS Bologna, I-40129 Bologna, Italy; Univ Bologna, Dept Appl Chem & Mat Sci, I-40136 Bologna, Italy (literal)

Titolo

Silicon heterojunction solar cell: A new buffer layer concept with low-temperature epitaxial silicon (literal)

Abstract

Amorphous silicon/crystalline silicon heterojunction solar cells, deposited by the plasma-enhanced chemical vapor deposition (PECVD) technique, have been fabricated using different technologies to passivate defects at the heterointerface: without treatment, the insertion of a thin intrinsic amorphous layer or that of a thin intrinsic epitaxial layer. The open circuit voltage of heterojunction solar cells fabricated including an intrinsic amorphous buffer layer is strangely lower than in devices with no buffer layer. The structure of the amorphous buffer layer is investigated by high resolution transmission electron microscope observations. As an alternative to amorphous silicon, the insertion of a fully epitaxial silicon layer, deposited at low temperature with conventional PECVD technique in a hydrogen-silane gas mixture, was tested. Using the amorphous silicon/crystalline silicon (p a-Si/i epi-Si/n c-Si) heterojunction structure in solar cells, a 13.5% efficiency and a 605-mV open circuit voltage were achieved on flat Czochralski silicon substrates. These results demonstrate that epitaxial silicon can be successfully used to passivate interface defects, allowing for an open circuit voltage gain of more than 50 mV compared to cells with no buffer layer. In this paper, the actual structure of the amorphous silicon buffer layer used in, heterojunction solar cells is discussed. We make the hypothesis that this buffer layer, commonly considered amorphous, is actually epitaxial. (literal)

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