Self-interstitial diffusion and clustering with impurities in crystalline silicon (Articolo in rivista)

Type
Label
  • Self-interstitial diffusion and clustering with impurities in crystalline silicon (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.nimb.2003.11.024 (literal)
Alternative label
  • Mirabella, S; De Salvador, D; Napolitani, E; Giannazzo, F; Impellizzeri, G; Bisognin, G; Terrasi, A; Raineri, V; Berti, M; Carnera, A; Drigo, AV; Priolo, F (2004)
    Self-interstitial diffusion and clustering with impurities in crystalline silicon
    in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Mirabella, S; De Salvador, D; Napolitani, E; Giannazzo, F; Impellizzeri, G; Bisognin, G; Terrasi, A; Raineri, V; Berti, M; Carnera, A; Drigo, AV; Priolo, F (literal)
Pagina inizio
  • 80 (literal)
Pagina fine
  • 89 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 216 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 10 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • INFM, I-95123 Catania, Italy; Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy; INFM, I-35131 Padua, Italy; Univ Padua, Dipartimento Fis, I-35131 Padua, Italy; CNR, IMM, Sez Catania, I-95121 Catania, Italy (literal)
Titolo
  • Self-interstitial diffusion and clustering with impurities in crystalline silicon (literal)
Abstract
  • In this work the diffusion of ion-beam-injected self-interstitials (Is) and their interaction with impurities in crystalline Si are presented. In particular, the I penetration into a molecular beam epitaxy grown Si structure was studied by means of diffusion effects induced on B spikes, analyzed by a developed simulation code. Trapping effects at sample-surface and bulk are evidenced and modeled. The B marker approach was extended to the two-dimensional (2D) I-diffusion occurring as a consequence of ion implantation through a sub-micron dimension patterned oxide mask. I-source size effects on the I penetration have been found and modeled, quantitatively describing the 2D I-diffusion. The I-substitutional carbon interactions have been also studied, showing the C ability to effectively retain Is. The I-trapping mechanism was quantitatively studied by the simulation code, showing that one I is able to deactivate about two C traps by means of I-trapping and C-clustering reactions. This C property was used to control the ion-implantation induced damage and, consequently, to completely suppress B transient enhanced diffusion. Finally, the interaction between I and B leading to the B agglomeration into small B-I clusters (BICs) has been experimentally investigated. BICs dissolution kinetics was studied at different temperatures, directly using experimental concentration profiles and an opportunely developed B-diffusion simulation code. The activation energy for BICs dissolution and the BICs stoichiometry are extracted and given. (literal)
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