Schottky-Ohmic transition in nickel silicide/SiC-4H system: the effect of non uniform Schottky barrier (Articolo in rivista)

Type
Label
  • Schottky-Ohmic transition in nickel silicide/SiC-4H system: the effect of non uniform Schottky barrier (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Alternative label
  • La Via, F; Roccaforte, F; Raineri, V; Mauceri, M; Ruggiero, A; Musumeci, P; Calcagno, L (2004)
    Schottky-Ohmic transition in nickel silicide/SiC-4H system: the effect of non uniform Schottky barrier
    in Materials science forum
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • La Via, F; Roccaforte, F; Raineri, V; Mauceri, M; Ruggiero, A; Musumeci, P; Calcagno, L (literal)
Pagina inizio
  • 861 (literal)
Pagina fine
  • 864 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 457 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, Catania, Italy; Epitaxial Technol, Catania, Italy; Catania Univ, Dept Phys, Catania, Italy (literal)
Titolo
  • Schottky-Ohmic transition in nickel silicide/SiC-4H system: the effect of non uniform Schottky barrier (literal)
Abstract
  • The transition from Schottky to ohmic contact in the nickel silicide/SiC system during annealing from 600 to 950 degreesC was investigated by measuring the electrical proprieties of the contact and by analyzing the microstructure of the silicide/SiC interface. After annealing at 950 degreesC the I-V characterisation shows the presence of a non uniform Schottky barrier with respect to the almost ideal diodes annealed at 600degreesC, which can be responsible for the rectifying-ohmic transition in the electrical behaviour. (literal)
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