Efficient visible laser emission of GaN laser diode pumped Pr-doped fluoride scheelite crystals (Articolo in rivista)

Type
Label
  • Efficient visible laser emission of GaN laser diode pumped Pr-doped fluoride scheelite crystals (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Alternative label
  • Cornacchia, F; Di Lieto, A; Tonelli, M; Richter, A; Heumann, E; Huber, G (2008)
    Efficient visible laser emission of GaN laser diode pumped Pr-doped fluoride scheelite crystals
    in Optics express
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Cornacchia, F; Di Lieto, A; Tonelli, M; Richter, A; Heumann, E; Huber, G (literal)
Pagina inizio
  • 15932 (literal)
Pagina fine
  • 15941 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 16 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • \"[Cornacchia, F.; Di Lieto, A.; Tonelli, M.] Univ Pisa, NEST, INFM, CNR,Dipartimento Fis, I-56127 Pisa, Italy; [Richter, A.; Heumann, E.; Huber, G.] Univ Hamburg, Inst Laser Phys, D-22761 Hamburg, Germany (literal)
Titolo
  • Efficient visible laser emission of GaN laser diode pumped Pr-doped fluoride scheelite crystals (literal)
Abstract
  • In the present work we report on the growth, spectroscopy and laser results of diode pumped Pr-doped LiYF4, LiLuF4 and LiGdF4 fluoride, scheelite-type structure crystals. We measured the polarisation dependent absorption and emission properties as well as the decay time of the P-3(0) level. Exploiting the P-3(2) absorption around 444 nm, we obtained efficient laser emission under GaN laser diode pumping on several transitions from the green to the near infrared wavelength range. (C) 2008 Optical Society of America (literal)
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