Grazing incident X-ray topographs of heteroepitaxial ZnSe films on GaAs substrates (Articolo in rivista)

Type
Label
  • Grazing incident X-ray topographs of heteroepitaxial ZnSe films on GaAs substrates (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1143/JJAP.43.L321 (literal)
Alternative label
  • Mizuno K, Fujiki F, Okamoto H, Prete P, Lovergine N (2004)
    Grazing incident X-ray topographs of heteroepitaxial ZnSe films on GaAs substrates
    in Japanese journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Mizuno K, Fujiki F, Okamoto H, Prete P, Lovergine N (literal)
Pagina inizio
  • 321 (literal)
Pagina fine
  • 323 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 43 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 3 (literal)
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Shimane Univ, Fac Sci & Engn, Dept Mat Sci, Matsue, Shimane 6908504, Japan; Kanazawa Univ, Sch Med, Dept Hlth Sci, Kanazawa, Ishikawa 9200942, Japan; IME, CNR, I-73100 Lecce, Italy; Univ Lecce, INFM, I-73100 Lecce, Italy; Univ Lecce, Dept Innovat Engn, I-73100 Lecce, Italy (literal)
Titolo
  • Grazing incident X-ray topographs of heteroepitaxial ZnSe films on GaAs substrates (literal)
Abstract
  • Surface reflection topographs of heteroepitaxial ZnSe films on GaAs substrates were obtained using grazing incident synchrotron X-ray radiation. The topographs indicated that diffraction occurred only in the ZnSe epilayer because no misfit dislocations within the interface were visible. Furthermore, the lattice perfection of the ZnSe epilayer was lower than that of the GaAs substrate, although strain relaxation arose due to the nucleation of misfit dislocations. (literal)
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