Effects of the thermal annealing processes on praseodymium oxide based films grown on silicon substrates (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Effects of the thermal annealing processes on praseodymium oxide based films grown on silicon substrates (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.mseb.2004.12.027 (literal)

Alternative label

• Lo Nigro R., Toro R.G., Malandrino G., Raineri V., Fragala I.L. (2005)
  Effects of the thermal annealing processes on praseodymium oxide based films grown on silicon substrates
  in Materials science & engineering. B, Solid-state materials for advanced technology
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Lo Nigro R., Toro R.G., Malandrino G., Raineri V., Fragala I.L. (literal)

Pagina inizio

• 192 (literal)

Pagina fine

• 196 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 118 (literal)

Rivista

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• IMM, Sez Catania, CNR, I-95127 Catania, Italy; Univ Catania, Dipartimento Sci Chim, INSTM, I-95125 Catania, Italy (literal)

Titolo

• Effects of the thermal annealing processes on praseodymium oxide based films grown on silicon substrates (literal)

Abstract

• We have investigated the effects of thermal annealing processes on Pr2O3/Pr-O-Si system grown using the metal organic chemical vapor deposition (MOCVD) technique from the Pr(tmhd)(3) [(H-tmhd = 2,2,6,6-tetramethylheptane-3,5-dione)] precursor. The influence of different atmospheres (Ar and O-2) during the annealing process has been investigated using transmission electron microscopy (TEM). The annealing processes have been carried out at two different temperatures, 800 and 900 degrees C, for 4 h. The praseodymium films have been found to be stable in argon atmosphere up to 800 degrees C whilst at 900 degrees C the film crystallization has been observed. On the other hand, in oxygen environment, evidence of crystallization processes has already been detected at 800 degrees C. The electron diffraction patterns of the crystallized films have shown some of the most intense reflections of the stoichiometric Pr8Si6O24 phase. (literal)

Prodotto di

• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• RAFFAELLA LO NIGRO (Unità di personale interno)
• ROBERTA GRAZIA TORO (Unità di personale interno)
• VITO RAINERI (Persona)

Insieme di parole chiave

• Keywords of "Effects of the thermal annealing processes on praseodymium oxide based films grown on silicon substrates" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• VITO RAINERI (Persona)
• RAFFAELLA LO NIGRO (Unità di personale interno)
• ROBERTA GRAZIA TORO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Insieme di parole chiave di

• Keywords of "Effects of the thermal annealing processes on praseodymium oxide based films grown on silicon substrates" (Insieme di parole chiave)