http://www.cnr.it/ontology/cnr/individuo/prodotto/ID35675

Effects of substrate treatment and growth conditions on structure, morphology, and luminescence of homoepitaxial ZnTe deposited by metalorganic vapor phase epitaxy (Articolo in rivista)

Type

Prodotto della ricerca (Classe)
Articolo in rivista (Classe)

Label

Effects of substrate treatment and growth conditions on structure, morphology, and luminescence of homoepitaxial ZnTe deposited by metalorganic vapor phase epitaxy (Articolo in rivista) (literal)

Anno

2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

10.1063/1.1762711 (literal)

Alternative label

Traversa M, Lovergine N, Prete P, Yoshino K, Di Luccio T, Scalia G, Pentimalli M, Tapfer L, Morales P, Mancini AM (2004)
Effects of substrate treatment and growth conditions on structure, morphology, and luminescence of homoepitaxial ZnTe deposited by metalorganic vapor phase epitaxy
in Journal of applied physics; American Institute of Physics, Melville [NY] (Stati Uniti d'America)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Traversa M, Lovergine N, Prete P, Yoshino K, Di Luccio T, Scalia G, Pentimalli M, Tapfer L, Morales P, Mancini AM (literal)

Pagina inizio

1230 (literal)

Pagina fine

1237 (literal)

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http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=4AANpCMg3Lfm2nDlHJj&page=3&doc=25 (literal)

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96 (literal)

Rivista

Journal of applied physics (Rivista)

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8 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

2 (literal)

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Google Scholar (literal)
Scopu (literal)
ISI Web of Science (WOS) (literal)

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Univ Lecce, Dipartimento Ing Innovaz, I-73100 Lecce, Italy; CNR, IMM, Sez Lecce, I-73100 Lecce, Italy; Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan; ENEA, UTSMAT, Ctr Ric Brindisi, I-72100 Brindisi, Italy; ENEA, UTSMAT, Ctr Ric Casaccia, I-00060 Santa Maria Di Galeria, Italy; Univ Lecce, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy (literal)

Titolo

Effects of substrate treatment and growth conditions on structure, morphology, and luminescence of homoepitaxial ZnTe deposited by metalorganic vapor phase epitaxy (literal)

Abstract

The structure, morphology, and luminescence of homoepitaxial ZnTe layers grown by metalorganic vapor phase epitaxy on (100)ZnTe:P wafers are reported as function of substrate surface treatment and growth conditions. Epilayers grown on substrates in situ H-2 treated at temperatures above 240 degreesC exhibit long range crystalline perfection comparable to the substrate, but their structure rapidly degrades at lower temperatures, an effect ascribed to the incomplete removal of native oxides from the wafer surface. Instead, the material microscopic structure improves monotonically by annealing the wafer up to 350 degreesC. A nearly featureless surface morphology is obtained for epilayers grown within a narrow temperature interval around 350 degreesC, corresponding to the transition between surface kinetics and mass transport limited growth. Surface ridging along a <110> in-plane direction is observed at lower temperatures, while large pyramidlike hillocks occur randomly on the surface of samples grown above 350 degreesC. Besides the epilayer band-edge (BE) emission, 4.2 K photoluminescence (PL) of samples show recombination bands characteristic of the ZnTe:P wafer, their excitation being due to diffusion into the substrate of excitons photogenerated in the epilayer. Within the BE emission, both 1s- and 2s- state free exciton (at 2.3809 eV and 2.3904 eV), as well as a neutral donor (at 2.3776 eV) and acceptor bound (at 2.3748 eV, 2.3739 eV, and 2.3706 eV) exciton lines occur. Intense and narrow (1.7 meV) free-exciton emission is observed for samples grown at 350 degreesC and Te:Zn precursors molar flow ratio around 1, while bound-exciton lines dominate the PL spectra below 350 degreesC. A weak donor-acceptor pair (DAP) band, ascribed to a transition involving a donor substitutional on Zn site (D-Zn) and a C-Te-D-Zn acceptor-type complex, appears between 2.16 and 2.27 eV in the PL spectra of epilayers grown below 350 degreesC or at low Zn precursor supply rates. The DAP band intensity well correlates with that of the 2.3776 eV donor and the 2.3706 eV acceptor bound exciton lines. At higher growth temperatures the epilayer crystallinity and radiative efficiency decrease. (literal)

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