Effect of oxygen on the diffusion of nitrogen implanted in silicon (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Effect of oxygen on the diffusion of nitrogen implanted in silicon (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1149/1.1759295 (literal)

Alternative label

• Mannino, G; Privitera, V; Scalese, S; Libertino, S; Napolitani, E; Pichler, P; Cowern, NEB (2004)
  Effect of oxygen on the diffusion of nitrogen implanted in silicon
  in Electrochemical and solid-state letters; Electrochemical Society Inc., Pennington (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Mannino, G; Privitera, V; Scalese, S; Libertino, S; Napolitani, E; Pichler, P; Cowern, NEB (literal)

Pagina inizio

• 161 (literal)

Pagina fine

• 163 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=ESLEF600000700000800G161000001&idtype=cvips&gifs=yes&ref=no (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 7 (literal)

Rivista

• Electrochemical and solid-state letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 8 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. CNR, Ist Microelettron & Microsistemi, Sez Catania, I-95121 Catania, Italy 2. Univ Padua, Ist Nazl Fis Mat, I-35131 Padua, Italy 3. Univ Padua, Dipartimento Fis, I-35131 Padua, Italy 4. Fraunhofer Inst, Integrated Circuits Device Technol Div, D-91058 Erlangen, Germany 5. Univ Surrey, Sch Elect Comp & Math, Surrey GU2 7XH, England (literal)

Titolo

• Effect of oxygen on the diffusion of nitrogen implanted in silicon (literal)

Abstract

• Nitrogen implants were performed in Si wafers of variable purity, i.e., epitaxial layers, float zone, and Czochralski silicon (CZ-Si). The diffusion behavior of nitrogen reported by Hockett in Appl. Phys. Lett., 54, 1793 (1989), where nitrogen diffuses for several micrometers at temperatures as low as 750degreesC and the profiles assume a \"double-peak'' structure, is peculiar of CZ-Si. In contrast, in pure epitaxial-Si, nitrogen is immobile at low temperature but, at a higher temperature (850degreesC), the broadening of the nitrogen profile never assumes the shape observed in CZ-Si. Our results suggest that oxygen determines the shape of the nitrogen diffusion profiles. (literal)

Editore

• Electrochemical Society Inc. (Editore)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• GIOVANNI MANNINO (Persona)
• SEBANIA LIBERTINO (Unità di personale interno)
• SILVIA SCALESE (Persona)
• VITTORIO PRIVITERA (Persona)

Incoming links:

Autore CNR di

• VITTORIO PRIVITERA (Persona)
• SEBANIA LIBERTINO (Unità di personale interno)
• GIOVANNI MANNINO (Persona)
• SILVIA SCALESE (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Electrochemical and solid-state letters (Rivista)

Editore di

• Electrochemical Society Inc. (Editore)