Quantitative determination of the clustered silicon concentration in substoichiometric silicon oxide layer (Articolo in rivista)

Type
Label
  • Quantitative determination of the clustered silicon concentration in substoichiometric silicon oxide layer (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1999839 (literal)
Alternative label
  • Spinella C.; Bongiorno C.; Nicotra G.; Rimini E.; Muscarà A.; Coffa S. (2005)
    Quantitative determination of the clustered silicon concentration in substoichiometric silicon oxide layer
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Spinella C.; Bongiorno C.; Nicotra G.; Rimini E.; Muscarà A.; Coffa S. (literal)
Pagina inizio
  • 044102 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://apl.aip.org/resource/1/applab/v87/i4/p044102_s1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 87 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 3 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, Ist Microelett & Microsistemi, I-95121 Catania, Italy; STMicroelect, I-95121 Catania, Italy (literal)
Titolo
  • Quantitative determination of the clustered silicon concentration in substoichiometric silicon oxide layer (literal)
Abstract
  • We present an analytical methodology, based on electron energy loss spectroscopy (EELS) and energy-filtered transmission electron microscopy, which allows us to quantify the clustered silicon concentration in annealed substoichiometric silicon oxide layers, deposited by plasma-enhanced chemical vapor deposition. The clustered Si volume fraction was deduced from a fit to the experimental EELS spectrum using a theoretical description proposed to calculate the dielectric function of a system of spherical particles of equal radii, located at random in a host material. The methodology allowed us to demonstrate that the clustered Si concentration is only one half of the excess Si concentration dissolved in the layer. (literal)
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