Cobalt contamination in silicon (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Cobalt contamination in silicon (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Alternative label

• Polignano M.L., Caputo D., Codegoni D., Privitera V., Riva M. (2005)
  Cobalt contamination in silicon
  in Diffusion and defect data, solid state data. Part B, Solid state phenomena
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Polignano M.L., Caputo D., Codegoni D., Privitera V., Riva M. (literal)

Pagina inizio

• 571 (literal)

Pagina fine

• 576 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 108 (literal)

Rivista

• Diffusion and defect data, solid state data. Part B, Solid state phenomena (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• ST Microelect, I-20041 Agrate Brianza, MI, Italy; CNR, IMM, I-95129 Catania, Italy (literal)

Titolo

• Cobalt contamination in silicon (literal)

Abstract

• The properties of cobalt as a contaminant in p-type silicon are studied by using cobalt-implanted wafers annealed by RTP or by RTP plus a low temperature furnace annealing. It is shown that after RTP most cobalt is under the form of CoB pairs. A quantification of cobalt contamination is provided based upon SPV measurements and optical pair dissociation. However, this quantification fails in furnace-annealed wafers because of the formation of a different level. It is shown that the CoB level is located near the band edges, whereas the level formed upon a low temperature furnace annealing is located near midgap. Besides, when the cobalt concentration is high enough a small fraction of cobalt is in a level different from the CoB pair even in RTP samples. This level can probably be identified with a previously observed midgap level. It is suggested that the same level is formed in RTP plus low temperature furnace annealed samples and in high concentration RTP annealed samples, and that this level may consist in some cobalt agglomerate. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)

Autore CNR

• VITTORIO PRIVITERA (Persona)

Incoming links:

Autore CNR di

• VITTORIO PRIVITERA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Diffusion and defect data, solid state data. Part B, Solid state phenomena (Rivista)