Structure of the oxide damage under progressive breakdown (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Structure of the oxide damage under progressive breakdown (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Alternative label

• Palumbo F., Condorelli G., Lombardo S., Pey K.L., Tung C.H., Tang L.J. (2005)
  Structure of the oxide damage under progressive breakdown
  in Microelectronics and reliability
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Palumbo F., Condorelli G., Lombardo S., Pey K.L., Tung C.H., Tang L.J. (literal)

Pagina inizio

• 845 (literal)

Pagina fine

• 848 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 45 (literal)

Rivista

• Microelectronics and reliability (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Sez Catania, I-95121 Catania, Italy; Nanyang Technol Univ, Ctr Microelect, Singapore 639798, Singapore; Inst Microelect, Singapore 117685, Singapore (literal)

Titolo

• Structure of the oxide damage under progressive breakdown (literal)

Abstract

• The I-V characteristics of ultra-thin gate oxides under progressive breakdown (BD) show a common behavior, indicative of well-defined general physical features of the BD spot. Transmission electron microscopy (TEM) observations give some hints about this structure and on this basis we propose a physical model of the post-BD current, which is in good agreement with data. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• SALVATORE LOMBARDO (Persona)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• SALVATORE LOMBARDO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Microelectronics and reliability (Rivista)