Room-temperature single-electron effects in silicon nanocrystal memories (Articolo in rivista)

Type
Label
  • Room-temperature single-electron effects in silicon nanocrystal memories (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2123377 (literal)
Alternative label
  • Pace C.; Crupi F.; Lombardo S.; Gerardi C.; Cocorullo G. (2005)
    Room-temperature single-electron effects in silicon nanocrystal memories
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Pace C.; Crupi F.; Lombardo S.; Gerardi C.; Cocorullo G. (literal)
Pagina inizio
  • 182106 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://apl.aip.org/resource/1/applab/v87/i18/p182106_s1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 87 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 3 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Calabria, DEIS, I-87036 Arcavacata Di Rende, CS, Italy; CNR, IMM, I-95121 Catania, Italy; STMicroelectronics, I-95121 Catania, Italy (literal)
Titolo
  • Room-temperature single-electron effects in silicon nanocrystal memories (literal)
Abstract
  • In this work, we present an experimental study on the single-electron effects observed at room temperature in silicon nanocrystal memories. The electrical characterization has been performed by means of a purposely designed low noise high bandwidth measurement system. Relevant statistical properties of the threshold voltage shifts induced by single-electron trapping and detrapping in the silicon dots are reported. The kinetics of electron capture and emission is also discussed. (literal)
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