Soft lithography fabrication of all-organic bottom-contact and top-contact field effect transistors (Articolo in rivista)

Type
Label
  • Soft lithography fabrication of all-organic bottom-contact and top-contact field effect transistors (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Cosseddu, P; Bonfiglio, A (2006)
    Soft lithography fabrication of all-organic bottom-contact and top-contact field effect transistors
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Cosseddu, P; Bonfiglio, A (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 88 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Cagliari, INFM, Dept Elect & Elect Engn, I-09123 Cagliari, Italy; INFM S3, Modena, Italy (literal)
Titolo
  • Soft lithography fabrication of all-organic bottom-contact and top-contact field effect transistors (literal)
Abstract
  • All-organic field effect transistors on flexible plastic substrates have been fabricated. A thin Mylar (R) foil acts both as substrate and gate dielectric. The contacts have been fabricated with poly(ethylene-dioxythiophene)/polystyrene sulfonate (PEDT/PSS) by means of soft lithography. The active layer (pentacene) is vacuum sublimed on the prepatterned film in case of bottom-contact devices or, in case of top-contact devices, the active layer sublimation is made in advance. On the opposite side of the foil, a thin PEDT/PSS film, acting as gate electrode, is spin coated. The comparison between top-contact and bottom-contact devices shows interesting characteristics as a marked difference in the I-D versus V-D curve that can be mainly attributed to a different quality of PEDT/PSS-semiconductor contact. The flexibility of the obtained structure and the easy scalability of the technological process open the way for economic production of high resolution organic devices. (literal)
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