http://www.cnr.it/ontology/cnr/individuo/prodotto/ID35599

Assessing the performance of two-dimensional dopant profiling techniques (Articolo in rivista)

Type

Label

Assessing the performance of two-dimensional dopant profiling techniques (Articolo in rivista) (literal)

Anno

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

Alternative label

Duhayon N; Eyber P; Fouchier M; Clarysee T; Vandervorst W; Alvarez D; Schoemann S; Ciappa M; Stangoni M; Fichtner W; Formanek P; Kittler M; Raineri V; Giannazzo F; Goghero D; Rosenwaks Y; Shikler R; Saraf S; Sadewasser S; Barreau N; Glatzel T; Verheijen M; Mentink SAM; von Sprekelsen M; Maltezopoulos T; Wiesendanger R; Hellemans L (2004)
Assessing the performance of two-dimensional dopant profiling techniques
in Journal of vacuum science & technology. B, Microelectronics and nanometer structures
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Duhayon N; Eyber P; Fouchier M; Clarysee T; Vandervorst W; Alvarez D; Schoemann S; Ciappa M; Stangoni M; Fichtner W; Formanek P; Kittler M; Raineri V; Giannazzo F; Goghero D; Rosenwaks Y; Shikler R; Saraf S; Sadewasser S; Barreau N; Glatzel T; Verheijen M; Mentink SAM; von Sprekelsen M; Maltezopoulos T; Wiesendanger R; Hellemans L (literal)

Pagina inizio

Pagina fine

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni

This paper contains the results obtained in the framework of the European ITN project \"Herculas\" on the two dimensional characterization of electrical properties in semiconductors by advanced scanning probe microscopy methods. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

Rivista

Note

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

IMEC, B-3001 Heverlee, Belgium; Katholieke Univ Leuven, B-3001 Heverlee, Belgium; Katholieke Univ Leuven, INSYS, B-3001 Heverlee, Belgium; Infineon Technol AG, D-81730 Munich, Germany; ETH, Swiss Fed Inst Technol, Integrated Syst Lab, CH-8092 Zurich, Switzerland; IHP, D-15236 Frankfurt, Germany; CNR, IMM, Sez Catania, I-95121 Catania, Italy; Tel Aviv Univ, Fac Engn, IL-69978 Tel Aviv, Israel; Hahn Meitner Inst Berlin GmbH, Abt SE2, D-14109 Berlin, Germany; Philips CFT, NL-5656 AA Eindhoven, Netherlands; Univ Hamburg, MARCH, CNN, D-20355 Hamburg, Germany; Katholieke Univ Leuven, B-3001 Heverlee, Belgium (literal)

Titolo

Assessing the performance of two-dimensional dopant profiling techniques (literal)

Abstract

This article discusses the results obtained from an extensive comparison set up between nine different European laboratories using different two-dimensional (2D) dopant profiling techniques (SCM, SSRM, KPFM, SEM, and electron holography). This study was done within the framework of a European project (HERCULAS), which is focused on the improvement of 2D-profiling tools. Different structures (staircase calibration samples, bipolar transistor, junctions) were used. By comparing the results for the different techniques, more insight is achieved into their strong and weak points and progress is made for each of these techniques concerning sample preparation, dynamic range, junction delineation, modeling, and quantification. Similar results were achieved for similar techniques. However, when comparing the results achieved with different techniques differences are noted. (literal)

Prodotto di